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The effect of the Gouy phase, which is one of the geometrical phases of photons, is observed through quantum correlation in Laguerre-Gaussian (LG) modes. In an experiment, the relative phase of two different LG modes of measurement basis states is manipulated via the Gouy phase, and the observed coincidence count rates agree well with theoretical predictions. This result suggests that the Gouy phase can be used as a new tool to manipulate multidimensional photonic quantum states. LG modes form an orthogonal basis set of paraxial solutions to the wave equation and have screw phase dislocations expil', where l is referred to as the azimuthal mode index. Photons in LG modes have orbital angular momentum l@ [13,14].

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Crystallization behaviors are isothermally examined on supercooled-liquid and amorphous states in metallic Zr-Al-Cu glasses using differential scanning calorimetry. On the basis of a kinetic analysis, it is examined that the crystallization occurs with a zero nucleation rate below the glass transition temperature Tg and a nearly steady-state nucleation rate above Tg. Arrhenius relation between effective time lag τ of nucleation and isothermal temperature appears as a curvature for alloys revealing a wide supercooled liquid region and a straight line for alloys without wider supercooled-liquid region. The differences are attributed to the effects of viscosity on nucleation at supercooled liquid. The difference in morphology during crystallization between amorphous and supercooled-liquid states was also confirmed.

This paper describes new 600-V trench highconductivity IGBTs (trench HiGTs) that have lower onstate voltages of 1.42 and 1.55 V at 200 NcmZ and tough short-circuit capabilities of 5 and 10 LL s, respectively. These HiGT have a better trade-off between turn-off losses and on-state voltages than conventional trench IGBTs, even better than planar IGBTs. They also offer a lower reverse transfer capacitances (-5PA) than the planar IGBT. The input capacitance obtained were lower (-30% to -60%) than that of a conventional trench IGBT.