Radiative transfer of energy at the nanometre length scale is of great importance to a variety of technologies including heat-assisted magnetic recording, near-field thermophotovoltaics and lithography. Although experimental advances have enabled elucidation of near-field radiative heat transfer in gaps as small as 20-30 nanometres (refs 4-6), quantitative analysis in the extreme near field (less than 10 nanometres) has been greatly limited by experimental challenges. Moreover, the results of pioneering measurements differed from theoretical predictions by orders of magnitude. Here we use custom-fabricated scanning probes with embedded thermocouples, in conjunction with new microdevices capable of periodic temperature modulation, to measure radiative heat transfer down to gaps as small as two nanometres. For our experiments we deposited suitably chosen metal or dielectric layers on the scanning probes and microdevices, enabling direct study of extreme near-field radiation between silica-silica, silicon nitride-silicon nitride and gold-gold surfaces to reveal marked, gap-size-dependent enhancements of radiative heat transfer. Furthermore, our state-of-the-art calculations of radiative heat transfer, performed within the theoretical framework of fluctuational electrodynamics, are in excellent agreement with our experimental results, providing unambiguous evidence that confirms the validity of this theory for modelling radiative heat transfer in gaps as small as a few nanometres. This work lays the foundations required for the rational design of novel technologies that leverage nanoscale radiative heat transfer.

Thermal radiative emission from a hot surface to a cold surface plays an important role in many applications, including energy conversion, thermal management, lithography, data storage and thermal microscopy. Recent studies on bulk materials have confirmed long-standing theoretical predictions indicating that when the gap between the surfaces is reduced to tens of nanometres, well below the peak wavelength of the blackbody emission spectrum, the radiative heat flux increases by orders of magnitude. However, despite recent attempts, whether such enhancements can be obtained in nanoscale dielectric films thinner than the penetration depth of thermal radiation, as suggested by theory, remains experimentally unknown. Here, using an experimental platform that comprises a heat-flow calorimeter with a resolution of about 100 pW (ref. 7), we experimentally demonstrate a dramatic increase in near-field radiative heat transfer, comparable to that obtained between bulk materials, even for very thin dielectric films (50-100 nm) when the spatial separation between the hot and cold surfaces is comparable to the film thickness. We explain these results by analysing the spectral characteristics and mode shapes of surface phonon polaritons, which dominate near-field radiative heat transport in polar dielectric thin films.

Recent experiments have demonstrated that radiative heat transfer between objects separated by nanometre-scale gaps considerably exceeds the predictions of far-field radiation theories. Exploiting this near-field enhancement is of great interest for emerging technologies such as near-field thermophotovoltaics and nano-lithography because of the expected increases in efficiency, power conversion or resolution in these applications. Past measurements, however, were performed using tip-plate or sphere-plate configurations and failed to realize the orders of magnitude increases in radiative heat currents predicted from near-field radiative heat transfer theory. Here, we report 100- to 1,000-fold enhancements (at room temperature) in the radiative conductance between parallel-planar surfaces at gap sizes below 100 nm, in agreement with the predictions of near-field theories. Our measurements were performed in vacuum gaps between prototypical materials (SiO2-SiO2, Au-Au, SiO2-Au and Au-Si) using two microdevices and a custom-built nanopositioning platform, which allows precise control over a broad range of gap sizes (from <100 nm to 10 μm). Our experimental set-up will enable systematic studies of a variety of near-field-based thermal phenomena, with important implications for thermophotovoltaic applications, that have been predicted but have defied experimental verification.

Conversion of heat to electricity via solid-state devices is of great interest and has led to intense research of thermoelectric materials. Alternative approaches for solid-state heat-to-electricity conversion include thermophotovoltaic (TPV) systems where photons from a hot emitter traverse a vacuum gap and are absorbed by a photovoltaic (PV) cell to generate electrical power. In principle, such systems may also achieve higher efficiencies and offer more versatility in use. However, the typical temperature of the hot emitter remains too low (<1,000 K) to achieve a sufficient photon flux to the PV cell, limiting practical applications. Theoretical proposals suggest that near-field (NF) effects that arise in nanoscale gaps may be leveraged to increase the photon flux to the PV cell and significantly enhance the power output. Here, we describe functional NFTPV devices consisting of a microfabricated system and a custom-built nanopositioner and demonstrate an ~40-fold enhancement in the power output at nominally 60 nm gaps relative to the far field. We systematically characterize this enhancement over a range of gap sizes and emitter temperatures, and for PV cells with two different bandgap energies. We anticipate that this technology, once optimized, will be viable for waste heat recovery applications.

In this work we demonstrate thermal rectification at the nanoscale between doped Si and VO surfaces. Specifically, we show that the metal-insulator transition of VO makes it possible to achieve large differences in the heat flow between Si and VO when the direction of the temperature gradient is reversed. We further show that this rectification increases at nanoscale separations, with a maximum rectification coefficient exceeding 50% at ∼140 nm gaps and a temperature difference of 70 K. Our modeling indicates that this high rectification coefficient arises due to broadband enhancement of heat transfer between metallic VO and doped Si surfaces, as compared to narrower-band exchange that occurs when VO is in its insulating state. This work demonstrates the feasibility of accomplishing near-field-based rectification of heat, which is a key component for creating nanoscale radiation-based information processing devices and thermal management approaches.