An unprecedented visible-light photoredox-catalyzed iminyl radical formation by N-H cleavage with H release has been developed. Its application in the synthesis of various isoquinolines and related polyaromatics in high atom economy at ambient temperature by applying a photosensitizer, Acr-Mes ClO, and a new cobalt catalyst, Co(dmgH)(4-CONMePy)Cl is reported. Mechanistic investigations indicated that the generated iminyl radical initiates the cascade C-N/C-C bonds formation and the catalytic cycle occurs by a simultaneous oxidative as well as reductive quenching pathway.

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A low temperature controlled annealing technique was utilized to improve the performance of vertical β-gallium oxide (β-Ga2O3) Schottky barrier diodes (SBDs) in this work. The nickel is diffused into Ga2O3, and NiO was formed at the interface between the anode and semiconductor generating p–n junction after low temperature annealing. Simultaneously, the trap state density of interface Ni/Ga2O3 as well as the carbon bonded with oxygen on the surface was reduced, which was proved by the capacitance and conductance measurements and x-ray photoelectron spectroscopic analysis, respectively. Combined the decreased saturation current density by three orders of magnitude from 1.21 × 10−6 to 9.27 × 10−8 and 5.12 × 10−9 A/cm2 and larger breakdown voltage from 220 to 270 V owing to the optimized interface and the formation of NiO, a low temperature annealing technique makes certain effective improvement for vertical β-Ga2O3 SBDs via interface engineering.

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