Electrochemical anodizing is one of the processes that due to its practicality, versatility, and excellent results has been used for decades for the oxidation of any metallic surface and the formation of nanostructures. In the present work was anodized commercially pure titanium using a solution based on hydrochloric acid, ethylene glycol, and deionized water. Varying the voltage from 21 to 24 volts was observed the formation of tube-shaped nanostructures in the anodized samples like a characteristic growth due to the use of HCl in the solution. Using Raman spectroscopy were identified the vibrational modes corresponding to the anatase phase. Using Vickers Microhardness and Nanoindentation it was demonstrated that the mechanical behavior was favored in the sample obtained with 24 Volts and growth time of 60 minutes. Finally, the TiO2 layers obtained improved the friction coefficient value of the titanium sheet, reducing its value from 0.8 to 0.4.

Nanostructured TiO 2 and TiO 2 /W thin films were deposited on Corning glass substrates by RF and DC magnetron co-sputtering at room temperature, using three targets of TiO, Ti and W. After deposition, samples were subjected to an annealing treatment in air at 500 °C for 3 hrs. The effect of the annealing treatment and tungsten addition to the TiO 2 matrix were studied by Raman spectroscopy and X-ray diffraction. Morphology and composition was studied with field emission scanning electron microscopy and optical characterization was made with UV-Vis spectroscopy. All the obtained samples presented an amorphous TiO 2 phase; however, after the annealing treatment, a crystallization process from amorphous to anatase phase occurred with gain sizes between 15.6 and 18.3 nm, additionally, a small amount of rutile was also observable. The SEM images corroborated the XRD behavior, besides it was possible to calculate the thickness of the films which was greater for the W-doped films owing the extra power of the sputtering growth, and after the samples had the thermal treatment the thickness decreased due to a more organized structure. Finally, the UV-vis transmittance analysis revealed that the transmittance is higher in heat-treated films as compared to those without any thermal treatment; also, the TiO 2 thin films showed a greater transmittance than the W doped TiO 2 films, reaching 91%. The lack of transmittance in the non-thermal-treated films made it impossible to compute the band gap of the films; nevertheless, for the thermal-treated films the band gap had a minimal change to the classic TiO 2 bang gap value, even for the W doped sample, providing them with the benefits of the tungsten within the same TiO 2 structure due to a great homogenization on the structure.