A method for determining the aluminum oxide and aluminum metal atomic concentratioas on complex aluminum alloy surfaces using a high-energy Mg/Zr x-ray source (1253.6 and 2042.4 eV, respectively) was discussed. XPS analysis of cbemically processed aluminum surfaces using an Mg or Mg/AI anode limits the anilysis of aluminum to the A1 2s and Al 2p photoelectron lines. Analysis of aluminum surfaces using the Al KLL Auger transition and the Mg or Mg/AI x-ray source is accomplished with the bremsstrahlung radiation. Tbe utility of tbe higb-ewrgy Mg/Zr x-ray anode is realized by offering the ability to qualitatively and quantitatively analyze aluminum using the Al KLL Auger region at 1374-1405 eV kinetic energy. The Al KLL Zr excited Auger transition provides a clear separation between tbe aluminum oxide and metal transitions (6.0 eV).

The shell of the Space Shuttle's External Tank is 2219-T87 aluminum to which an epoxy primer is applied to allow bonding of the Thermal Protection System (TPS). A chromate deoxidizer is used to prepare the aluminum surface for primer bonding. In this study, scanning electron microscopy (SEM) was used to characterize the surface morphology of 2219-T87 aluminum associated with different bond strengths produced by varying the deoxidizer treatment parameters.Eight sets of two 2219-T87 aluminum panels were treated with chromate deoxidizer. One set was used as a control. The second set was subjected to an additional deoxidizer treatment, while the third set received two additional deoxidizer treatments. The fourth, fifth, and sixth sets were held for 5, 10, and 15 minute post deoxidiation and prior to final rinse with demineralized water. The two remaining sets were deliberately contaminated with 25:1 and 100:1 water:deoxidizer solutions, which were allowed to dry on their surfaces.

This article presents a method for determining the interfacial chemical composition of semiconductor thin films. Some of the materials and interfaces characterized by this technique are tungsten silicide, titanium nitride, silicon nitride, titanium silicide, and aluminum. These thin film materials are typically supported on conductive (silicon, polysilicon) and nonconductive (boron-doped phosphosilicate glass) substrates. The determination of their interfacial chemical compositions is enhanced by using the zirconium anode (2042.4 eV). The simultaneous use of magnesium and zirconium anodes allows the analysis of the photoelectrons as well as the corresponding higher energy Auger electrons for such materials as silicon and aluminum. The kinetic energies of the Al KLL and Si KLL are beyond the Fermi level (zero binding energy) of either the magnesium (1253.6 eV) or aluminum (1486.6 eV) anodes. The photoelectron used in conjunction with thin film Auger electrons provides the energy necessary for determining Auger parameters, which are independent of localized sample charging and provide their chemical identification. Charging is common to many of these materials and is especially prevalent when analyzed using an increasingly common monochromatized aluminum source for excitation. Thus, the simultaneous use of the magnesium (1253.6 eV) and zirconium (2042.4 eV) anodes is charge independent and provides interfacial chemical identification.