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The authors demonstrate p-in traveling wave photodetectors utilizing low-temperature-grown GaAs as the absorption layer. The electro-optically measured impulse response was found to exhibit a pulsewidth of 1.1 ps full width at half maximum, corresponding to a Ϫ3 dB bandwidth of 370 GHz with an external quantum efficiency of 8% at 800 nm.

Abstract:A new concept for the fabrication of integrated microring resonators, requiring only one single epitaxial growth and two single-side lithographic steps, is proposed in what is the simplest fabrication scheme for vertical microrings published to date. The approach is based on two vertically stacked phase matched core layers. The effect of bus waveguide, coupling region and ring structure parameters is theoretically analyzed. Numerical calculations predict high performance devices with quality factors of over 10000. The scheme can feature both active and passive regions, allowing the fabrication of microring lasers.

A new active-passive monolithic integration approach for photonic components based on vertical evanescent coupling is presented. Two vertically stacked waveguides are used in order to provide full resonant power transfer between them and avoiding the need of tapered structures. Light confinement in each waveguide is achieved combining strong lateral asymmetric structures and bent waveguides, both defined during lithography. Low propagation losses for the active waveguide and coupling efficiencies to the passive section as high as 97% have been obtained.

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