We demonstrate the fabrication of diffraction-limited dielectric metasurface lenses for NIR by the use of standard industrial high-throughput silicon processing techniques: UV nano imprint lithography (UV-NIL) combined with continuous reactive ion etching (RIE) and pulsed Bosch deep reactive ion etching (DRIE). As the research field of metasurfaces moves towards applications, these techniques are relevant as potential replacements of commonly used cost-intensive fabrication methods utilizing electron beam ithography. We show that washboard-type sidewall surface roughness arising from the Bosch DRIE process can be compensated for in the design of the metasurface, without deteriorating lens quality. Particular attention is given to fabrication challenges that must be overcome towards high-throughput production of relevance to commercial applications. Lens efficiencies are measured to be 25.5% and 29.2% at wavelengths λ = 1.55μm and λ = 1.31μm, respectively. A number of routes towards process optimization are proposed in relation to encountered challenges.

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