The structure and composition of single GaAsBi/GaAs epilayers grown by molecular beam epitaxy were investigated by optical and transmission electron microscopy techniques. Firstly, the GaAsBi layers exhibit two distinct regions and a varying Bi composition profile in the growth direction. In the lower (25 nm) region, the Bi content decays exponentially from an initial maximum value, while the upper region comprises an almost constant Bi content until the end of the layer. Secondly, despite the relatively low Bi content, CuPtB-type ordering was observed both in electron diffraction patterns and in fast Fourier transform reconstructions from high-resolution transmission electron microscopy images. The estimation of the long-range ordering parameter and the development of ordering maps by using geometrical phase algorithms indicate a direct connection between the solubility of Bi and the amount of ordering. The occurrence of both phase separation and atomic ordering has a significant effect on the optical properties of these layers.PACS78.55.Cr III-V semiconductors; 68.55.Nq composition and phase identification; 68.55.Ln defects and impurities: doping, implantation, distribution, concentration, etc; 64.75.St phase separation and segregation in

Polarization-resolved resonant fluorescence of a single semiconductor quantum dot Appl. Phys. Lett. 101, 251118 (2012) Optical cavity efficacy and lasing of focused ion beam milled GaN/InGaN micropillars J. Appl. Phys. 112, 113516 (2012) Competitive carrier interactions influencing the emission dynamics of GaAsSb-capped InAs quantum dots Appl. Phys. Lett. 101, 231109 (2012) Fluorescence quantum efficiency of CdSe/ZnS quantum dots embedded in biofluids: pH dependence J. Appl. Phys. 112, 104704 (2012) Modification of the conduction band edge energy via hybridization in quantum dots

We obtain the phase diagram and thermodynamic behavior of the Kondo necklace model for arbitrary dimensions $d$ using a representation for the localized and conduction electrons in terms of local Kondo singlet and triplet operators. A decoupling scheme on the double time Green's functions yields the dispersion relation for the excitations of the system. We show that in $d\geq 3$ there is an antiferromagnetically ordered state at finite temperatures terminating at a quantum critical point (QCP). In 2-d, long range magnetic order occurs only at T=0. The line of Neel transitions for $d>2$ varies with the distance to the quantum critical point QCP $|g|$ as, $T_N \propto |g|^{\psi}$ where the shift exponent $\psi=1/(d-1)$. In the paramagnetic side of the phase diagram, the spin gap behaves as $\Delta\approx \sqrt{|g|}$ for $d \ge 3$ consistent with the value $z=1$ found for the dynamical critical exponent. We also find in this region a power law temperature dependence in the specific heat for $k_BT\gg\Delta$ and along the non-Fermi liquid trajectory. For $k_BT \ll\Delta$, in the so-called Kondo spin liquid phase, the thermodynamic behavior is dominated by an exponential temperature dependence.Comment: Submitted to PR

The use of GaAsSbN capping layers on InAs/GaAs quantum dots (QDs) has recently been proposed for micro- and optoelectronic applications for their ability to independently tailor electron and hole confinement potentials. However, there is a lack of knowledge about the structural and compositional changes associated with the process of simultaneous Sb and N incorporation. In the present work, we have characterized using transmission electron microscopy techniques the effects of adding N in the GaAsSb/InAs/GaAs QD system. Firstly, strain maps of the regions away from the InAs QDs had revealed a huge reduction of the strain fields with the N incorporation but a higher inhomogeneity, which points to a composition modulation enhancement with the presence of Sb-rich and Sb-poor regions in the range of a few nanometers. On the other hand, the average strain in the QDs and surroundings is also similar in both cases. It could be explained by the accumulation of Sb above the QDs, compensating the tensile strain induced by the N incorporation together with an In-Ga intermixing inhibition. Indeed, compositional maps of column resolution from aberration-corrected Z-contrast images confirmed that the addition of N enhances the preferential deposition of Sb above the InAs QD, giving rise to an undulation of the growth front. As an outcome, the strong redshift in the photoluminescence spectrum of the GaAsSbN sample cannot be attributed only to the N-related reduction of the conduction band offset but also to an enhancement of the effect of Sb on the QD band structure.

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