In situ trap parameter studies in CCDs for space applications. In: High Energy, Optical, and Infrared Detectors for Astronomy VI, p. 915408. For guidance on citations see FAQs.

The goals of future space missions such as Euclid require unprecedented positional accuracy from the responsible detector. Charge coupled devices (CCDs) can be manufactured with exceptional charge transfer properties; however the harsh radiation environment of space leads to damage within the silicon lattice, predominantly through proton collisions. The resulting lattice defects can trap charge, degrading the positional accuracy and reducing the useful operating time of a detector. Mitigation of such effects requires precise knowledge of defects and their effects on charge transfer within a CCD. We have used the technique of single-trap "pumping" to study two such charge trapping defects; the silicon divacancy and the carbon interstitial, in a p-channel CCD. We show this technique can be used to give accurate information about trap parameters required for radiation damage models and correction algorithms. We also discuss some unexpected results from studying defects in this way.

Radiation damage effects are problematic for space-based detectors. Highly energetic particles, predominantly from the sun can damage a detector and reduce its operational lifetime. For an image sensor such as a Charge-Coupled Device (CCD) impinging particles can potentially displace silicon atoms from the CCD lattice, creating defects which can trap signal charge and degrade an image through smearing. This paper presents a study of one energy level of the silicon divacancy defect using the technique of single trap-pumping on a proton irradiated n-channel CCD. The technique allows for the study of individual defects at a sub-pixel level, providing highly accurate data on defect parameters. Of particular importance when concerned with CCD performance is the emission time-constant of a defect level, which is the time-scale for which it can trap a signal charge. The trap-pumping technique is a direct probe of individual defect emission time-constants in a CCD, allowing for them to be studied with greater precision than possible with other defect analysis techniques such as deep-level transient spectroscopy on representative materials.

JINST 9 C12004have enabled the investigation of not only the defect densities and the device-averaged trap parameters, but also the properties of individual lattice defects in the device, en route to actively predicting the impact of the radiation environment before launch. KEYWORDS: Radiation damage evaluation methods; Radiation damage to detector materials (solid state); Detector modelling and simulations I (interaction of radiation with matter, interaction of photons with matter, interaction of hadrons with matter, etc)

Abstract-P-channel CCDs have been shown to display improved tolerance to radiation-induced charge transfer inefficiency (CTI) when compared to n-channel CCDs. However, the defect distribution formed during irradiation is expected to be temperature dependent due to the differences in lattice energy caused by a temperature change. This has been tested through defect analysis of two p-channel e2v CCD204 devices, one irradiated at room temperature and one at a cryogenic temperature (153K). Analysis is performed using the method of single trap pumping. The dominant charge trapping defects at these conditions have been identified as the donor level of the silicon divacancy and the carbon interstitial defect. The defect parameters are analysed both immediately post irradiation and following several subsequent room-temperature anneal phases up until a cumulative anneal time of approximately 10 months. We have also simulated charge transfer in an irradiated CCD pixel using the defect distribution from both the room-temperature and cryogenic case, to study how the changes affect imaging performance. The results demonstrate the importance of cryogenic irradiation and annealing studies, with large variations seen in the defect distribution when compared to a device irradiated at room-temperature, which is the current standard procedure for radiation-tolerance testing.