Metal–halide perovskites have recently shown tremendous progress in flexible photodetector applications owing to their great optical and electronic properties. However, apart from charge generating material, the high performance device requires a reasonable choice of electrodes for efficient carrier management as well. For example, the widespread use of gold and silver electrodes often results in perovskite device degradation while being expensive. Here, low‐cost and chemically inert single‐walled carbon nanotube (SWCNT) thin films are employed as electrodes to create highly responsive and flexible photodetector based on cesium lead tribromide (CsPbBr3) microcrystals. Direct growth of the perovskite on SWCNT forms excellent contact between the components leading to the state‐of‐the‐art responsivity for flexible perovskite photodetectors 1321 A W−1 at 5 V and under illumination intensity 1 mW cm−2 at 505 nm wavelength. The advanced properties of SWCNT films realized on a flexible substrate allow for robust operation over 104 cycles of device bending along with all parameters stability at ambient conditions for at least 1.5 months. The proposed design reveals the potential of SWCNT thin film electrodes for high performance perovskite flexible devices.

Resonant dielectric structures have emerged recently as a new platform for subwavelength nonplasmonic photonics. It was suggested and demonstrated that magnetic and electric Mie resonances can enhance substantially many effects at the nanoscale including spontaneous Raman scattering. Here, we demonstrate stimulated Raman scattering (SRS) for isolated crystalline silicon (c-Si) nanoparticles and observe experimentally a transition from spontaneous to stimulated scattering manifested in a nonlinear growth of the signal intensity above a certain pump threshold. At the Mie resonance, the light gets confined into a low volume of the resonant mode with enhanced electromagnetic fields inside the c-Si nanoparticle due to its high refractive index, which leads to an overall strong SRS signal at low pump intensities. Our finding paves the way for the development of efficient Raman nanolasers for multifunctional photonic metadevices.

Gallium phosphide is a low-loss, high-refractive-index semiconductor considered as a promising material for active and passive components in modern nanophotonics. In this work, we show that nanoscale epitaxial layers of GaP with high optical quality can be formed directly on the transparent sapphire wafers despite the symmetry and lattice constant mismatch. This is achieved using a two-step growth technique through the framework of a domain matching epitaxy mechanism. Direct molecular beam epitaxial growth enables the control of material properties and layer thickness with subnanometer precision and allows us to obtain (111)-oriented epitaxial layers of GaP on high-optical-contrast sapphire wafers without the use of postgrowth layer transfer techniques. The influence of growth conditions on the structural quality of GaP-on-sapphire is revealed using Raman spectroscopy and X-ray diffraction reciprocal space mapping. We study the impact of the growth procedure employing a low-temperature seeding layer on the GaP layer morphology and structural quality. Spectroscopic ellipsometry measurements confirm that both the refractive index and the absorption coefficient of the epitaxial GaP layers are close to those of bulk GaP crystals. We also discuss how the GaP layer morphology and structural quality affect its optical density, drawing special attention to the mechanisms of optical losses. Finally, by nanostructuring the grown layer, we fabricate single GaP nanoantennas and confirm their highly resonant optical response in the visible spectral range, thus confirming the feasibility of the reported technology for various nanophotonic applications.

Optical heating of resonant nanostructures is one of the key issues in modern nanophotonics, being either harmful or desirable effect depending on the applications. Despite a linear regime of light-to-heat conversion being well-studied both for metal and semiconductor resonant systems is generalized as a critical coupling condition, the clear strategy to optimize optical heating upon high-intensity light irradiation is still missing. This work proposes a simple analytical model for such a problem, taking into account material properties changes caused by the heating. It allows us to derive a new general critical coupling condition for the nonlinear case, requiring a counterintuitive initial spectral mismatch between the pumping light frequency and the resonant one. Based on the suggested strategy, we develop an optimized design for efficient nonlinear optical heating, which employs a cylindrical nanoparticle supporting the quasi bound state in the continuum mode (quasi-BIC or so-called ‘super-cavity mode’) excited by the incident azimuthal vector beam. Our approach provides a background for various nonlinear experiments related to optical heating and bistability, where self-action of the intense laser beam can change resonant properties of the irradiated nanostructure.

We develop a model describing non-equilibrium processes under the excitation of resonant semiconductor nanostructures with ultrashort laser pulses with a duration of about 100 fs. We focus on the heating effects related to pulsed excitation with account on free carriers generation, thermalization, and relaxation. The heat exchange between the electron and phonon system is treated within the two-temperature model. We applied the developed model to describing pulsed heating of silicon nanocylinder on top of a dielectric substrate. We come up with estimations of the thermal damage threshold of the considered structures which provides the limits for the experimental conditions and ensures thermal stability of the samples.