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The article presents 28 GHz circular polarized antenna arrays designed in an embedded wafer level ball grid array (eWLB) package for 5G applications. The antenna arrays are realized on a re‐distribution layer (RDL) in the fan‐out region of the chip package. Two separate but identical arrays perform RX and TX operations where a crossed dipole is used as a building block of the array. These 4‐element arrays have <−10 dB impedance bandwidth covering 25.3–29.8 GHz (4.5 GHz bandwidth) while presenting 10 dBi maximum realized gain. The measurement results show <3 dB axial ratio in the band 26–29.5 GHz, and the main beam can be steered in ±50∘ in the azimuth plane when array elements are fed by appropriate phases from the chip. The radio frequency module provides 31 dBm maximum equivalent isotropic radiated power (EIRP).

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In this paper, we present a 28 GHz antenna array in package which covers the n257 and n258 frequency bands designated for 5G applications. The dipole antenna array is placed on one of the two re-distribution layers in the fan-out eWLB (embedded Wafer Level Ball Grid Array) package. For TX and RX, separate but identical antenna arrays are placed on each side of the die. The paper presents a novel horn-shaped heatsink which not only dissipates the heat, but also improves the radiation performance. The four-elements dipole array has the impedance bandwidth of almost 6 GHz (24–30 GHz) and shows a maximum realized gain of 9.5 dBi. Beam-steering in ± 35 deg is achieved in the azimuth plane (H-plane) by providing different phases to the dipoles through the chip. The measurements nicely agree with the simulation results.