The recombination rate coefficients (RRCs) A, B, and C in MOVPE‐grown single‐quantum‐well light emitting diodes spanning the entire blue‐green spectral range are determined by fitting efficiency curves and differential carrier lifetimes. The results show definite trends for each of the RRCs: A tendentially decreases with increasing wavelength, B definitely decreases, and C remains approximately constant. Therefore, the increase of the droop with increasing wavelength (the green gap problem) is rather due to the decrease of B than an increase of C. The determined values of C are shown to be similar to what has been predicted by others with first‐principles computer simulations accounting for phonon‐assisted Auger recombination. Samples grown on sapphire and silicon substrates are compared and show significant differences only for the RRC A, presumably due to the difference in threading dislocation density.

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We investigated lateral charge carrier transport in indium gallium nitride InGaN/GaN multi-quantum wells for two different samples, one sample emitting green light at about 510 nm and the other emitting cyan light at about 470 nm. For the cyan light emitting sample we found a diffusion constant of 1.2 cm2/s and for the green light emitting sample 0.25 cm2/s. The large difference in diffusion constant is due to a higher point defect density in the green light emitting quantum wells (QWs) as high indium incorporation tends to reduce material quality