The epidemic of 2019 novel coronavirus, later named as severe acute respiratory syndrome coronavirus 2 (SARS-CoV-2), is still gradually spreading worldwide. The nucleic acid test or genetic sequencing serves as the gold standard method for confirmation of infection, yet several recent studies have reported false-negative results of real-time reverse-transcriptase polymerase chain reaction (rRT-PCR). Here, we report two representative false-negative cases and discuss the supplementary role of clinical data with rRT-PCR, including laboratory examination results and computed tomography features. Coinfection with SARS-COV-2 and other viruses has been discussed as well.

DC and pulse voltage-induced metal-insulator transition (MIT) in epitaxial VO2 two terminal devices were measured at various stage temperatures. The power needed to switch the device to the ON-state decrease linearly with increasing stage temperature, which can be explained by the Joule heating effect. During transient voltage induced MIT measurement, the incubation time varied across 6 orders of magnitude. Both DC I-V characteristic and incubation times calculated from the electrothermal simulations show good agreement with measured values, indicating Joule heating effect is the cause of MIT with no evidence of electronic effects. The width of the metallic filament in the ON-state of the device was extracted and simulated within the thermal model.

Threshold switching devices are of increasing importance for a number of applications including solid-state memories and neuromorphic circuits. Their non-linear characteristics are thought to be associated with a spontaneous (occurring without an apparent external stimulus) current flow constriction but the extent and the underlying mechanism are a subject of debate. Here we use Scanning Joule Expansion Microscopy to demonstrate that, in functional layers with thermally activated electrical conductivity, the current spontaneously and gradually constricts when a device is biased into the negative differential resistance region. We also show that the S-type negative differential resistance I – V characteristics are only a subset of possible solutions and it is possible to have multiple current density distributions corresponding to the same value of the device voltage. In materials with steep dependence of current on temperature the current constriction can occur in nanoscale devices, making this effect relevant for computing applications.