dielectrics for future stackedcapacitor DRAM Thin films of barium-strontium titanate (Ba,Sr)TiO 3 (BSTO) have been investigated for use as a capacitor dielectric for future generations of dynamic random-access memory (DRAM). This paper describes progress made in the preparation of BSTO films by liquid-source metal-organic chemical vapor deposition (LS-MOCVD) and the issues related to integrating films of BSTO into a DRAM capacitor. Films of BSTO deposited on planar Pt electrodes meet the electrical requirements needed for future DRAM. The specific capacitance and charge loss are found to be strongly dependent on the details of the BSTO deposition, the choice of the lower electrode structure, the microstructure of the BSTO, the post-electrode thermal treatments, BSTO dopants, and thin-film stress. Films of BSTO deposited on patterned Pt electrodes with a feature size of 0.2 m are found to have degraded properties compared to films on large planar structures, but functional bits have been achieved on a DRAM test site at 0.20-m ground rules. Mechanisms influencing specific capacitance and charge loss of BSTO films are described, as are the requirements for the electrode and barrier materials used in stacked-capacitor structures, with emphasis given to the properties of the Pt/TaSi(N) electrode/barrier system. Major problems requiring additional investigation are outlined.

The dielectric relaxation of Ba0.7Sr0.3TiO3 thin films was investigated up to K band (20 GHz) using time domain and frequency domain measurements. Our results show that from 1 mHz to 20 GHz, the dielectric relaxation of the complex capacitance of Ba0.7Sr0.3TiO3 thin films can be understood in terms of a power law dependence known as the Curie–von Schweidler law. The small dispersion (less than 7% decrease in capacitance from 1 mHz to 20 GHz) and low loss (loss angle less than 0.006 at 20 GHz) measured in Ba0.7Sr0.3TiO3 thin films indicate that these films are applicable to device application up to at least K band.

A DNA sequencing device which integrates transverse conducting electrodes for the measurement of electrode currents during DNA translocation through a nanopore has been nanofabricated and characterized. A focused electron beam (FEB) milling technique, capable of creating features on the order of 1 nm in diameter, was used to create the nanopore. The device was characterized electrically using gold nanoparticles as an artificial analyte with both DC and AC measurement methods. Single nanoparticle/electrode interaction events were recorded. A low-noise, high-speed transimpedance current amplifier for the detection of nano to picoampere currents at microsecond time scales was designed, fabricated and tested for future integration with the nanopore device.

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We have investigated the effects of Mn impurities on Ba0.7Sr0.3TiO3 thin films using x-ray photoemission spectroscopy. Mn acts as an electron acceptor, compensating for the charge density found in nominally undoped films. This causes a greatly increased depletion width in acceptor-doped films. We also present evidence that acceptor-doped films have an increased barrier to thermionic emission of electrons from Pt contacts into the dielectric. This may explain the decrease in leakage current observed in some acceptor-doped titanates.