SURMOF (surface-anchored metal-organic frameworks) thin films exhibit exciting chemical and physical properties, which can be modulated in as traightforward fashion to achieve specific benefits for numerousa pplications in future technologies. Here, we report ad etailed characterizationo fr esistive switching in crystalline SURMOF films of around % 10, % 20 and % 50 nm thicknesses. These demonstrated switching characteristics combined with the ability to deposit monolithically oriented crystalline HKUST-1 films with well-definedt hicknesses in the nm-range on conductive substrates serving as bottom electrodes and to lithographically fabricatet op-electrodes opens up the possibility to employ these metal-organich ybrid materials as solid state devices for potential nonvolatile resistive random access memory (RRAM)m emory applications. MOF bipolar switchingR RAM devices based on SURMOFs with thicknesses of 10 AE 5nm, 20 AE 5nma nd 50 AE 5nms how exceptionally promising performance. The huge flexibility of MOF materials with regards to devicea pplications is demonstrated by loading guest molecules into the pores of these framework materials. In the case of ferrocene infiltration,w es how that the already impressive performance of the SURMOF-RRAM devicesc an be furtheri mproved. The resultsd emonstrate the great potential of SURMOF thin films for the implementation of novel and scalable active materials for the next generation of digitalp rocessing and organic-based microelectronic devices.

Synthesis and growth of Vanadium dioxide on Silicon substrates has been investigated by Atomic Layer Deposition (ALD). ALD Vanadium oxide films were synthesized by using the novel Tetrakis[ethylmethylamino] vanadium {V(NEtMe)4} [TEMAV], as the vanadium precursor source and H2O vapor as the oxidizing source. The as-prepared ALD thin films were amorphous due to low temperature growth at 150 oC and exhibit a mixture of V2O5 and VO2 phases, which originiate from the V4+ and V5+ valence states of Vanadium found in the initially amorphous ALD thin film. We found that VO2 formation is strongly dependent on the amount of pressure and oxygen. The VO2 films were formed at 450 -500 oC and with an oxygen flow rate of less than 1 sccm in a vacuum of 2.7 E-2 Torr. ALD VO2 films, after furnace annealing, demonstrate well-formed roundish grains. The ALD VO2 thin films yielded an rms roughness of 3 nm by AFM analysis and are random polycrystalline after annealing.

Among the many vanadium suboxides and different stoichiometries, VO 2 has received considerable attention due to its remarkable metal-insulator transition (MIT) behavior, which causes a significant reversible change in its electrical and optical properties occurring across the phase transition at 67 • C. The initially amorphous VO 2 thin films were fabricated by the emerging, Atomic Layer Deposition (ALD) technique with (tetrakis [ethylmethylamino]vanadium) {V(NEtMe) 4 } as precursor and H 2 O vapor as oxidation agent. For benchmarking we have also used the RF Magnetron Sputtering technique to deposit metallic vanadium thin films, which were later oxidized during furnace annealing. Post annealing of the as-deposited ALD films was performed in order to obtain the technologically important form of crystallized VO 2 thin films using furnace annealing. All film depositions were carried out on native oxide covered (100) Si substrates. The conditions for successful furnace annealing are reported in terms of temperature and annealing gas composition and the physical characterization results are presented. VO 2 exhibits many technologically remarkable properties that lie at the core of the renewed interest in this material. In particular, VO 2 shows a semiconductor-metal transition (SMT) or metal-insulator transition (MIT) at ∼67• C. This (MIT) phase transition at ∼67 • C is accompanied by a reversible change in its electrical and optical properties.1-3 At low-temperatures below the transition, VO 2 shows a semiconducting phase that has a monoclinic crystal structure. When the temperature rises above the transition temperature, the VO 2 exhibits its metallic phase which has a rutile crystal structure. The MIT of VO 2 is attributed to the combination of Mott-Hubbard transition with Peierls transition. 4 Electrically, the change in resistivity of bulk VO 2 across the MIT temperature can be as large as four or five orders of magnitude. Optically, crystalline VO 2 thin films exhibit good infrared transmission in the insulating monoclinic phase below the MIT temperature, while the metallic rutile phase is highly reflective in the infrared region. 5,6 Based on these temperature dependent optical transmission changes crystalline VO 2 is also known as a thermochromic material, which can be employed as thin films in smart window applications to reduce air condition and heating costs. Because of these physical properties VO 2 films have the potential to be used in nonvolatile resistive memories, switches in microelectronics and optical sensors and smart window applications.However, the V-O system has been reported to contain about 25 compounds and suboxide phase. 7,8 It is experimentally challenging to find the optimum combination of different furnace annealing parameters that would result in the accurate mixture of vanadium and oxygen in the desired proportion to obtain the stoichiometric VO 2 phase. Even a 1% change in the oxygen content of the annealing atmosphere in the furnace would further oxidize the initially amorphous va...