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Conformal mapping techniques are employed to determine geometrical correction factors for the general case of an in‐line four‐point probe positioned on a thin circular sample. Simplified expressions are also obtained which relate the correction factor to a single dimensionless quantity when the probe separation distance is a small fraction (≲ 10%) of the wafer radius. Experimental results are presented which confirm the validity of the theoretical correction factors and demonstrate the importance of accounting for geometric effects when presenting data in the form of iso‐sheet resistance contour maps.