We tracked over time the conductance switching of single and bundled phenylene ethynylene oligomers isolated in matrices of alkanethiolate monolayers. The persistence times for isolated and bundled molecules in either the ON or OFF switch state range from seconds to tens of hours. When the surrounding matrix is well ordered, the rate at which the inserted molecules switch is low. Conversely, when the surrounding matrix is poorly ordered, the inserted molecules switch more often. We conclude that the switching is a result of conformational changes in the molecules or bundles, rather than electrostatic effects of charge transfer.

Electronically programmable memory devices utilizing molecular self-assembled monolayers are reported. The devices exhibit electronically programmable and erasable memory bits compatible with conventional threshold levels and a memory cell applicable to a random access memory is demonstrated. Bit retention times Ͼ15 min have been observed.

Molecular devices are reported utilizing active self-assembled monolayers containing the nitroamine [2′-amino-4,4′-di(ethynylphenyl)-5′-nitro-1-benzenethiolate] or the nitro compound [4,4′-di(ethynylphenyl)-2′-nitro-1-benzenethiolate] as the active components. Both of these compounds have active redox centers. Current–voltage measurements of the devices exhibited negative differential resistance at room temperature and an on–off peak-to-valley ratio in excess of 1000:1 at low temperature.

The electrical properties of self-assembled monolayers (SAMs) on metal surfaces have been explored for a series of molecules to address the relation between the behavior of a molecule and its structure. We probed interfacial electron transfer processes, particularly those involving unoccupied states, of SAMs of thiolates or arylates on Au by using shear force-based scanning probe microscopy (SPM) combined with current-voltage (i-V) and current-distance (i-d) measurements. The i-V curves of hexadecanethiol in the low bias regime were symmetric around 0 V and the current increased exponentially with V at high bias voltage. Different than hexadecanethiol, reversible peak-shaped i-V characteristics were obtained for most of the nitro-based oligo(phenylene ethynylene) SAMs studied here, indicating that part of the conduction mechanism of these junctions involved resonance tunneling. These reversible peaked i-V curves, often described as a negative differential resistance (NDR) effect of the junction, can be used to define a threshold tip bias, V(TH), for resonant conduction. We also found that for all of the SAMs studied here, the current decreased with increasing distance, d, between tip and substrate. The attenuation factor beta of hexadecanethiol was high, ranging from 1.3 to 1.4 A(-1), and was nearly independent of the tip bias. The beta-values for nitro-based molecules were low and depended strongly on the tip bias, ranging from 0.15 A(-1) for tetranitro oligo(phenylene ethynylene) thiol, VII, to 0.50 A(-1) for dinitro oligo(phenylene) thiol, VI, at a -3.0 V tip bias. Both the V(TH) and beta values of these nitro-based SAMs were also strongly dependent on the structures of the molecules, e.g. the number of electroactive substituent groups on the central benzene, the molecular wire backbone, the anchoring linkage, and the headgroup. We also observed charge storage on nitro-based molecules. For a SAM of the dintro compound, V, approximately 25% of charge collected in the negative scan is stored in the molecules and can be collected at positive voltages. A possible mechanism involving lateral electron hopping is proposed to explain this phenomenon.