Low temperature sintering of TiO2-base varistor was systematically investigated through doing with V2O5 and B-Si glass. Pellets prepared could be densely sintered from 1273 to 1473K. The highest relative density, 94.6%, was found in the sample sintered at 1433K. According to I-V plots of ceramic pellets, the nonlinear coefficient α and breakdown voltage V1mA were obtained and found to be α=2~5 and V1mA=15~30V. The room temperature dielectric constant was very large, high as to about 20000. Powder XRD analysis has shown the desirable macro-structural characteristics of these compacts.

No abstract

(1-x)BiScO3-xPbTiO3 (BSPT) based ferroelectric ceramics were prepared by conventional solid state process. X-ray diffraction analysis revealed that the morphotropic phase boundary (MPB) separating the rhombohedral and tetragonal phases for the BSPT system exited near x=0.62. It was found that the stability of perovskite structure of the BSPT system was improved with the increase of PbTiO3 content. For the 0.36BiScO3-0.64Pb1-ySryTiO3 (BSPST) system, because of higher amount of ionic bonding, the stability of perovskite structure for BSPT compounds containing strontium is larger than that of non-strontium compound.

The phases of Panzhihua vanadic titanomagnetite ore were studied by using XRF and XRD. XRF results show that the original ore mainly contain the elements, Fe, Ti, Si, Ca, Al, S, Mg, P, Mn, V and etc. XRD results show that the main substances in original ore were Fe3O4 and FeTiO3, and the minor phases cannot be clearly studied by XRD. After heat treatment for 10h at 573K in atmospheric ambient, the phases of the ore have been slightly changed. And after heat treatment for 10h at 1073K in atmospheric ambient, then cooled for 48h to room temperature, the main phases of the ore have almost been changed to Fe2O3 and Fe2TiO5.

Ti film on AISI 201 was prepared by plasma. The film was characterized and analyzed by using a variety of analytical techniques, such as XRD, SEM and universal test machine. Ti films were deposited on AISI 201 stainless steel substrate, it was found that of Ti film has a different microstructure in various negative bias. And film density is connected with bias. When bias rose from the 15V to 100V, the film density increased from 3.82 g/cm3 to 4.28 g/cm3. After bias rose from the 100V to 180V, film density decreased from 4.28 g/cm3 to 4.13g/cm3. And also, due to the microstructural changes, the adhesiveness of Ti films at the AISI 201 increased from 1.16 MPa to maximum of 3.87 MPa, and then decreased. There is a similar maximum value of approximately 7.53 MPa at the AISI 304.