Now days, the establishment of spacers is in wide usage in three-phase Gas Insulated Busduct (GIB) for providing mechanical support and better insulation to the conductors. The region of the intersection of SF6 gas, enclosure end and the spacer is one of the weakest links in GIB, so the major concentration is done on minimization of electric field stress at this junction by using Functionally Graded Material (FGM) technique. The other incidents of insulation failures are due to several defects like depression, delamination etc. reduces the dielectric strength of the spacers. In this paper, an FGM post type spacer has been designed for a three-phase GIB under depression and further electric field stress at Triple Junction (TJ) is reduced by introducing a metal insert (MI) nearer to the TJ. Several filler materials are used as doping materials for obtaining different permittivity values using FGM technique to achieve uniform electric field stress. Simulation is carried out for the designed spacer at various operating voltages with different types of FGM gradings. The effect of depression with different dimensions and positions is analyzed before and after inserting MI to the FGM post type spacer in three-phase GIB.

The establishment of supporting insulators plays a vital role in the continuous operation of the three-phase Gas Insulated Busduct (GIB), which primarily depends on the distribution of electric field stress on the spacer surface. Shape control is a technique used along the spacer surface to achieve uniform field intensity, but this technique can also lead to very irregular shapes. The Triple Junction (TJ) is the region where the field stress has to be reduced. Over a period, high field stresses along the spacer surface will result in a surface flashover and thus de-energize the complete GIB, leading to enormous losses economically. In this paper, a Functionally Graded Material (FGM) spacer for a three-phase GIB has been designed with more number of gradings and further field stress at TJ is minimized by inserting and reshaping the metal inserts (MI) at the end of the enclosure. By doping them with different permittivity values, functionally graded materials are spatially distributed with multiple filler materials to achieve uniform stress on the electric field. Simulation is carried out with the FGM and epoxy (post type) Spacers for different voltages and FGM gradings. With MI, the stress is minimized and an enhanced uniform field allocation along the surface is obtained.