The band gap bowing effect in oleic acid-stabilized CdS x Se 1−x alloy quantum dots (Q-dots) with varying composition has been studied experimentally by means of cyclic voltammetry and theoretically using density functional theory based calculations. Distinct cathodic and anodic peaks observed in the cyclic voltammograms of diffusing quantum dots alloy are attributed to the respective conduction and valence band edges. The quasi-particle gap values determined from voltammetric measurements are compared with interband transition peaks in UV−vis and PL spectra. Electronic structure for alloy Q-dots is determined computationally with projector augmented wave method for a particular size of dots. The band gap bowing is observed predominantly in the conduction band states. The bowing parameter determined experimentally (0.45 eV) has been found to be in good agreement with the one estimated from DFT (0.43 eV).
We report on the combined experimental and theoretical simulation results of lead-free ferroelectrics, Ba(1-x)CaxTiO3 (x = 0.0–0.3) and BaTi(1-y)ZryO3 (y = 0.0–0.2), synthesized by standard solid state reaction method. First principles density functional calculations are used to investigate the electronic structure, dynamical charges, and spontaneous polarization of these compounds. In addition, the structural, ferroelectric, piezoelectric, and dielectric properties are studied using extensive experiments. The X-ray diffraction and temperature dependent Raman spectroscopy studies indicate that the calcium (Ca) substituted compositions exhibit a single phase crystal structure, while zirconium (Zr) substituted compositions are biphasic. The scanning electron micrographs reveal the uniform and highly dense microstructure. The presence of polarization-electric field and strain-electric field hysteresis loops confirms the ferroelectric and piezoelectric nature of all the compositions. Our results demonstrate higher values for polarization, percentage strain, piezoelectric coefficients, and electrostrictive coefficient compared to those existing in the literature. For smaller substitutions of Ca and Zr in BaTiO3, a direct piezoelectric coefficient (d33) is enhanced, while the highest d33 value (∼300 pC/N) is observed for BaTi0.96Zr0.04O3 due to the biphasic ferroelectric behavior. Calculation of Born effective charges indicates that doping with Ca or Zr increases the dynamical charges on Ti as well as on O and decreases the dynamical charge on Ba. An increase in the dynamical charges on Ti and O is ascribed to the increase in covalency of Ti-O bond that reduces the polarizability of the crystal. A broader range of temperatures is demonstrated to realize the stable phase in the Ca substituted compounds. The results indicate enhancement in the temperature range of applicability of these compounds for device applications. The combined theoretical and experimental study is expected to enhance the current scientific understanding of the lead-free ferroelectric materials.
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We report the effects of variation in length on the electronic structure of CdSe nanorods derived from atomic clusters and passivated by fictitious hydrogen atoms. These nanorods are augmented by attaching gold clusters at both the ends to form a nanodumbbell. The goal is to assess the changes at nanolevel after formation of contacts with gold clusters serving as electrodes and compare the results with experimental observations 1 . Calculations involving nanorods of length 4.6Å to 116.6Å are performed using density functional theory implemented within plane-wave basis set. The binding energy per atom saturates for nanorod of length 116.6Å. It is interesting to note that upon attaching gold clusters, the nanorods shorter than 27Å develop metallicity by means of metal induced gap states (MIGS). Longer nanorods exhibit a nanoscale Schottky barrier emerging at the center. For these nanorods, interfacial region closest to the gold electrodes shows a finite density of states in the gap due to MIGS, which gradually decreases towards the center of the nanorod opening up a finite gap. Bader charge analysis indicates localized charge transfer from metal to semiconductor.
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