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This work fabricates deep-ultraviolet (DUV) photodetectors (PDs) with a metal-semiconductor-metal structure based on radio-frequency sputtered amorphous Ga2O3 films at room temperature. The Ga2O3-based PD exhibits a low dark current of 1.41×10-11 A, good responsivity of 1.77 A/W and a fast-rise response time of 114 ms. A series of annealing treatments with different atmospheres have been found effective to reduce the oxygen vacancy concentration, exhibiting a trade-off effect between the responsivity and response time. These results demonstrate a cost-effective room-temperature approach for fabricating amorphous Ga2O3-based PDs and develop possible post-synthetic methods for tuning the PD performance.

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