A new procedure is presented to separate and extract source-and-drain series resistance and mobility degradation factor parameters in MOSFET compact models. It also allows us to extract the device's channel conductance. The procedure is not based on fitting, but on directly calculating the three parameters by solving a system of three simultaneous equations. The equations represent the measured source-to-drain output resistance, obtained from the output characteristics, and its first and second integrals with respect to gate voltage. This method may be applied to a single device, measured in strong inversion as a function of gate voltage, at a small drain bias.

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A MOSFET model parameters extraction procedure that overcomes the difficulties of separating the effects of source-and-drain series resistance and mobility degradation factor is presented. Instead of the conventional direct fitting, the present procedure involves the use of indirect bidimensional fitting of the source-to-drain resistance of a single device, as obtained from the below-saturation output characteristics measured at several above-threshold gate voltages. The procedure is verified with a simulated long channel FinFET device with externally added resistances and is later applied to experimental planar bulk DRAM MOSFET devices with channel lengths ranging from 0.23μm to 2.0μm. The procedure is shown to be advantageous in terms of computational efficiency and it is appropriate even with high values of externally added series resistances. For the case of devices with various channel lengths, the accuracy of the procedure is improved if the value of RSD is extracted from the shortest channel length. This value of RSD could be used for extracting the other parameters for devices with longer channel.

We present the extraction of MOSFET model parameters as functions of the channel length by means of a procedure based on the use of the measured source-to-drain resistance, instead of the conventional direct fitting to the drain current characteristics. Doing so, allows to separately extract the two parameters, source-and-drain series resistance and mobility degradation factor, that give rise to comparable effects on the current-gate voltage characteristics. The procedure involves a bidimensional fitting of the source-to-drain resistance as obtained from the below-saturation output characteristics measured at several above-threshold gate voltages. Its application is illustrated on experimental DRAM MOSFET test devices with channel lengths ranging from 0.23 to 2.0 m. It is shown that the new procedure is able to overcome the common difficulty typically encountered when trying to separate the effects of these two parameters using more conventional extraction methods.