The excitonic behavior in two-dimensional (2D) heterostructures of transition metal dichalcogenide atomic layers has attracted much attention. Here, we report, for the first time, the ultrafast behavior of charge carriers in heterostructure of metal (NbSe2) and semiconductor (WSe2) atomic layers via ultrafast spectroscopy. We observe a blue-shift of the excited-state absorption peak in time-resolved absorption spectra with time delays in both the as-grown semiconducting WSe2 and the metal–semiconductor heterostructure. However, the heterostructure shows a clear difference in the peak position and relaxation time of its electrons. This result indicates higher excited energy states in WSe2 in the presence of the NbSe2 metallic layer contact and implies the existence of interlayer electron quenching from WSe2 to NbSe2 layers. The heterostructure shows a shorter time scale in the peak rise time compared to bare WSe2, due to interfacial defects between WSe2 and NbSe2 layers. The results offer a better understanding of the optoelectronic properties of 2D heterostructure interfaces.

The vertical aligned carbon nanotubes (CNTs)-based pillar architectures were created on laminated silicon oxide/silicon (SiO2/Si) wafer substrate at 775 °C by using water-assisted chemical vapor deposition under low pressure process condition. The lamination was carried out by aluminum (Al, 10.0 nm thickness) as a barrier layer and iron (Fe, 1.5 nm thickness) as a catalyst precursor layer sequentially on a silicon wafer substrate. Scanning electron microscope (SEM) images show that synthesized CNTs are vertically aligned and uniformly distributed with a high density. The CNTs have approximately 2–30 walls with an inner diameter of 3–8 nm. Raman spectrum analysis shows G-band at 1580 cm−1 and D-band at 1340 cm−1. The G-band is higher than D-band, which indicates that CNTs are highly graphitized. The field emission analysis of the CNTs revealed high field emission current density (4mA/cm2 at 1.2V/μm), low turn-on field (0.6 V/μm) and field enhancement factor (6917) with better stability and longer lifetime. Emitter morphology resulting in improved promising field emission performances, which is a crucial factor for the fabrication of pillared shaped vertical aligned CNTs bundles as practical electron sources.

No abstract

Small and large single-walled carbon nanotubes (SWCNTs) bundles from different-sized cobalt catalyst clusters have been synthesized and prepared through chemical vapor deposition (CVD) method by using Co-acetate ethanol solution with silica nanoparticles. By controlling concentration of Co-acetate ethanol solution (0.2 wt% and 0.4 wt%), various sizes and types of bundle of SWCNTs are grown on the silica nanoparticle substrates. Synthesized SWCNT's diameter ranged from 0.92 nm to 1.63 nm, and chirality of SWCNTs and their electronic property from high concentration solution show diverse characteristics. In high concentration solution, the large number of cobalt clusters is induced to merge on the surface of silica nanoparticles and then lots of nucleation points are provided by cobalt clusters for growth of SWNTs. These results give us a promising path to selectively synthesize various types of SWCNTs with different shapes of merged cobalt catalyst. Engineering bundle sizes of SWCNTs can be promising key for diverse applications of carbon nanotubes.