In this paper, we extend to II–VI and III–V group binary solids of zinc blende (ZB) structure with conduction d-electrons the calculation of static and dynamical properties such as bulk modulus (B) and cohesive energy or total energy (Ecoh) using the plasma oscillation theory of solids formalism already employed for ternary chalcopyrite semiconductors. The present method is not limited to tetrahedrally coordinated semiconductors and ternary chalcopyrites, but can be used for all semiconducting compounds. We have applied an extended formula on ZB structured binary semiconductors and found better agreement with the experimental data as compared to the values evaluated by previous researchers. The bulk modulus and cohesive energy of ZB-type structure compounds exhibit a linear relationship when plotted on a log–log scale against the plasmon energy ℏωp (in eV), but fall on a straight line. The results for bulk modulus differ from experimental values by the following amounts: ZnS 0.36%, ZnSe 10%, ZnTe 0.62%, CdS 1.8%, CdSe 7.4% and CdTe 1.6%, AlP 2.6%, AlAs 5.3%, AlSb 4.0%, GaP 0%, AlAs 0%, AlS 4.4%, InP 0%, InAs 0% and InSb 2.1%; and the results for cohesive energy differ from experimental values by the following amounts: ZnS 0.16%, ZnSe 0.73%, ZnTe 0.6%, CdS 7.6%, CdSe 3.5%, CdTe 2.5%, AlP 2.0%, AlAs 3.0%, AlSb 11.1%, GaP 14.6%, AlAs 17.0%, AlSb 8.7%, InP 4.3%, InAs 5.5% and InSb 0.6%.

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Load Balancing is a technique to improve resources, utilizing parallelism, exploiting throughput managing and to reduce response time through proper distribution of the application.Load balancing strategies is always used for the emergence of Grid computing is a replica of distributed computing that uses geographically and disperses resources. To increase performance and efficiency, the Grid system needs competent load balancing algorithms for the distribution of tasks. Load balancing algorithms is of two types, static and dynamic. Our projected algorithm is based on dynamic strategies.

The Phillips and Van Vechten theory was applied to aluminum, gallium and indium pnictides (AlP, AlAs, AlSb, GaP, GaAs, GaSb, InP, InAs and InSb). The values of the homopolar gap, ionic gap and Penn gap were evaluated for these binary semiconductors. The derived values of Eh and Ep were found to be in good agreement with the values obtained from the Phillips model and the Penn model. Electronic polarizability was investigated using the Chemla relation and the values were found to be in agreement with the results obtained from the Clausius–Mossotti relation. The Phillips ionicity (fi) was evaluated and the obtained values were compared with the values obtained from the Tubbs model and the Pauling ionicity model. The evaluated values of various ionicities were used to determine the microhardness (H), cohesive energy or total energy (E) and bulk modulus (B) of these materials. The values of these parameters thus obtained are in good agreement with previously reported experimental data and theoretical findings.

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