This paper describes platinum nanofilm formation via the electrochemical form of atomic layer deposition (E-ALD), where the E-ALD cycles are based on surface limited redox replacement (SLRR) reaction. SLRR is where an atomic layer (AL) of a reactive (sacrificial) metal is exchanged for a more noble metal. In the present study both Cu and Pb AL were investigated as sacrificial atomic layers for replacement with both Pt(II) and Pt(IV) precursors. 25 E-ALD cycles were used to form Pt nanofilm deposits. Initial deposits contained an order of magnitude more Pt than expected, evidenced by a factor of 7 increase in surface roughness. Overly positive potentials achieved during the exchange promoted excess deposition and surface roughening. It is proposed that anionic Pt precursors adsorbed more strongly at high potentials, making them difficult to rinse from the cell. Those remaining adsorbed Pt anions are then reduced to Pt o when the potential was shifted negative for deposition of the sacrificial element. The result was Pt o formation at a large overpotential, which, contributed to excessive Pt deposits and roughening. Increased rinsing of the anionic Pt precursors from the cell eliminated the excess Pt deposition and roughening, resulting in the expected layer by layer growth of an ALD process.

This paper concerns the electrochemical growth of compound semiconductor thin film superlattice structures using electrochemical atomic layer deposition (ALD). Electrochemical ALD is the electrochemical analogue of atomic layer epitaxy (ALE) and ALD, methods based on nanofilm formation an atomic layer at a time, using surface-limited reactions. Underpotential deposition (UPD) is a type of electrochemical surfaced-limited reaction used in the present studies for the formation of PbSe/PbTe superlattices via electrochemical ALD. PbSe/PbTe thin-film superlattices with modulation wavelengths (periods) of 4.2 and 7.0 nm are reported here. These films were characterized using electron probe microanalysis, X- ray diffraction, atomic force microscopy (AFM), and infrared reflection absorption measurements. The 4.2 nm period superlattice was grown after deposition of 10 PbSe cycles, as a prelayer, resulting in an overall composition of PbSe0.52Te0.48. The 7.0 nm period superlattice was grown after deposition of 100 PbTe cycle prelayer, resulting for an overall composition of PbSe0.44Te0.56. The primary Bragg diffraction peak position, 2theta, for the 4.2 superlattice was consistent with the average (111) angles for PbSe and PbTe. First-order satellite peaks, as well as a second, were observed, indicating a high-quality superlattice film. For the 7.0 nm superlattice, Bragg peaks for both the (200) and (111) planes of the PbSe/PbTe superlattice were observed, with satellite peaks shifted 1 degrees closer to the (111), consistent with the larger period of the superlattice. AFM suggested conformal superlattice growth on the Au on glass substrate. Band gaps for the 4.2 and 7.0 nm period superlattices were measured as 0.48 and 0.38 eV, respectively.

The growth of stoichiometric CuInSe(2) (CIS) on Au substrates using electrochemical atomic layer deposition (E-ALD) is reported here. Parameters for a ternary E-ALD cycle were investigated and included potentials, step sequence, solution compositions and timing. CIS was also grown by combining cycles for two binary compounds, InSe and Cu(2)Se, using a superlattice sequence. The formation, composition, and crystal structure of each are discussed. Stoichiometric CIS samples were formed using the superlattice sequence by performing 25 periods, each consisting of 3 cycles of InSe and 1 cycle of Cu(2)Se. The deposits were grown using 0.14, -0.7, and -0.65 V for Cu, In, and Se precursor solutions, respectively. XRD patterns displayed peaks consistent with the chalcopyrite phase of CIS, for the as-deposited samples, with the (112) reflection as the most prominent. AFM images of deposits suggested conformal deposition, when compared with corresponding image of the Au on glass substrate.

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