Bismuth-Antimony alloys () is the first reported 3D Topological Insulator (TI). Among many TIs reported to the date, it remains the most promising for spintronic applications thanks to its large conductivity, its colossal spin Hall angle, and the possibility to build low current spin-orbit-torque (SOT) magnetoresistive random access memories (MRAM). Nevertheless, the 2D integration of TIs on industrial standards is lacking. In this work, we report the inte-
Topological insulators (TIs) are known as promising materials
for
new nanoelectronics and spintronics applications thanks to their unique
physical properties. Among these TIs, bismuth antimony alloys (Bi1–x
Sb
x
)
remain the most interesting because their electronic band structure
can be controlled by changing the stoichiometry, the thickness, or
the temperature. However, integrating these materials on an industrial
substrate remains a challenge. Here, we investigate the growth, structural,
and electrical properties of BiSb materials epitaxially deposited
on industrial GaAs(001) substrates. We report the influence of key
growth parameters such as temperature, antimony composition, thickness,
and growth rate on the crystal quality. We manage to optimize the
growth conditions while keeping the Bi1–x
Sb
x
composition within the TI range.
Despite the large lattice mismatch and different crystalline matrices
between the deposited material and the substrate, we successfully
grow high-quality BiSb(0001) films. For optimized growth conditions,
n-type semiconductor behavior of the BiSb layer is demonstrated at
temperatures above 100 K. The material band gap calculated from our
transport measurements corresponds to that mentioned in the literature.
A change of the carrier type from bulk electrons to surface holes
is observed when decreasing the temperature below 55 K. Hole mobilities
up to 7620 cm2/(V·s) are extracted. This is, to our
knowledge, the first demonstration of TI integrated on an industrial
substrate keeping its protected surface states.
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