Flash light-based photonic curing has recently emerged as a promising technique for low-cost and ultrafast production of flexible electronics. In this work, we demonstrate photonic curing-based low-cost fabrication of ZrO 2based high-k dielectric and ZnO-based semiconducting layers for low-voltage, high-performance, flexible, and transparent thin-film transistors (TFTs). Such metal oxide-based devices are extremely important to realize next-generation technologies with high power efficiency, optical transparency,mecahnical flexibility, high reliability, and environmental stability. In the current work, photonic cured ZrO 2 and ZnO layers were obtained by exposing their spin-coated precursor solutions to the high-energy pulsed light of a xenon flash lamp. The numbers of applied pulses were varied for optimization. Hence, the optimally cured ZrO 2 film exhibited excellent dielectric property with high areal capacitance of ∼485 nFcm −2 , low leakage current density of 10 −4 A cm −2 , and high breakdown strength of ∼2.3 MV cm −1 which further enabled the low-voltage operation (< 3 V) for the fabricated TFTs. On the other hand, the optimally cured ZnO layer resulted in the high performance for the TFTs with field-effect mobility of 3.4 ± 0.1 cm 2 V −1 s −1 , on−off ratio of 3.3 ± 0.8 × 10 5 , and threshold voltage of 0.8 ± 0.03 V. The mechanical flexibility of these devices was demonstrated by showing their operational stability under mechancial bending and after continuous bending cycles. These devices also exhibited optical transparency up to 80% in the visible wavelength range. To explain the behavior of these photonic cured layers and devices under different process conditions, several microscopic and spectroscopic studies were performed. Finally, the ultraviolet−visible absorption spectroscopy and a finite element simulation study also showed the viability of photonic curing to successfully fabricate solution-derived ZnO and ZrO 2 layers on a flexible substrate.