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This paper presents a new current-mode single input multi output (SIMO) type biquad employing one voltage differencing transconductance amplifier (VDTA), two grounded capacitors and a single grounded resistor. The configuration realizes all basic filter functions (i.e. Low Pass (LP), High Pass (HP), Band Pass (BP), Notch (BR) and All Pass (AP)). The natural frequency (ω 0 ) and bandwidth (BW) are independently tunable. The workability of proposed configuration has been verified using SPICE simulation with TSMC CMOS 0.18 μm process parameters.

A new active circuit is proposed for the realisation of lossless grounded and floating inductance employing Voltage Differencing Differential Input Buffered Amplifiers (VD-DIBAs). The proposed grounded simulated inductance circuit employs two VD-DIBAs and a single-grounded capacitor whereas the floating simulated inductance circuit employs three VD-DIBAs and a grounded capacitor. The circuit for grounded inductance does not require any realization conditions whereas in case of floating inductance, only equality of two transconductances is needed. Some sample results demonstrating the applications of the new simulated inductors using VD-DIBAs have been given to confirm the workability of the new circuits.

An electronically controllable fully uncoupled explicit current-mode quadrature oscillator employing Voltage Differencing Transconductance Amplifiers (VDTAs) as active elements has been presented. The proposed configuration employs two VDTAs along with grounded capacitors and offers the following advantageous features 1) fully and electronically independent control of condition of oscillation (CO) and frequency of oscillation (FO); 2) explicit currentmode quadrature oscillations; and 3) low active and passive sensitivities. The workability of proposed configuration has been demonstrated by PSPICE simulations with TSMC CMOS 0.18 μm process parameters.

In this paper, the complementary charge-plasma (CP) based symmetrical-gate electron-hole bilayer (EHB) Tunnel Field-Effect Transistor (TFET) at a low operating voltage (≤0.5V) is introduced. Where, by using CP technique, the source/drain & EHB-channel is induced by depositing metal electrode with appropriate work function. Moreover, the immunity against random dopant fluctuations and the feasibility of a self-aligned process due to a symmetrical top/bottom gate arrangement without the need for a high thermal annealing process make the fabrication of the proposed EHB-TFET very reliable and efficient. Moreover, by implementing the Density Gradient Quantum Correction Model, the quantum confinement and its effect on confining the 2D electron-hole concentration are also corrected as the proposed device has a smaller channel thickness of 5 nm. The proposed device shows superior performance against almost all Si-based CP-TFETs with a higher ON-current of 47.33μA/μm, a smaller average subthreshold swing of 13.53mV/dec and a high ON-current to OFF-current ratio of 2.16×1013. This indicates that the proposed device is a promising candidate for future low-power applications