Ding Lin Xu scite author profile

The heterostructural film combining ferroelectric layer Pb0.8La0.1Ca0.1Ti0.975O3(PLCT) with semiconductor layer Zn0.99La0.01O (ZLO) was deposited between Pt electrodes by chemical solution deposition (CSD) method. The Pt/PLCT/ZLO/Pt structure device exhibits either memory or threshold resistance switching (RS) by setting the compliance current (ICC) at room temperature. The memory RS with a large ON/OFF ratio (∼104) is triggered by a highICC, while the threshold RS appears by setting the compliance current to a relatively low value. The physical mechanisms for the memory and threshold RS are discussed and attributed to the formation of an oxygen vacancy conductive filament and the electrical field induced breakdown, respectively.

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Ding Lin Xu

Bipolar resistive switching behaviors in Cr-doped ZnO films

Resistive Switching Properties of Sol–Gel-Derived V-Doped SrTiO3 Thin Films

Memory and Threshold Resistance Switching in Pb<sub>0.8</sub>La<sub>0.1</sub>Ca<sub>0.1</sub>Ti<sub>0.975</sub>/Zn<sub>0.99</sub>La<sub>0.01</sub>O Heterostructure

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