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Vacancy defects engineering is a valid strategy to enhance the separation efficiency of photo-generated charges. Herein, a zinc vacancy mediated S-scheme ZnCdS/ZnS composite derived from ZnCdS/MOF-5 was constructed in-situ through the sacrificial reagent of Na 2 S/Na 2 SO 3 aqueous solution in visiblelight irradiation. The MOF-5 converted to ZnS (ZnSÀ V Zn ) with abundant zinc vacancies which were proved by the XPS and PL results. ZnSÀ V Zn has two-photon absorption performance, which immensely enhanced the visible light absorption capacity for the photocatalysts. The photo-generated electrons of ZnSÀ V Zn on the Zn-vacancy defect would regroup with the holes in the valence band (VB) of ZnCdS via ohmic contact which is induced by Zn-vacancy defects. Therefore, the photoexciton of ZnCdS can be able to separate effectively and eliminate the useless electrons and holes. The ZnCdS/ZnS(20) sample revealed an outstanding photocatalytic hydrogen generation rate of 12.31 mmol h À 1 g À 1 with a turnover number (TON) of 64.61, which is about 82.06 and 21.98 times greater than that of neat ZnSÀ V Zn and ZnCdS. This work gives an insight into the design of the zinc vacancy-engineered S-scheme photocatalyst of ZnCdS/ZnS for highly efficient photocatalysis.

Herein, a novel amorphous monodisperse Co3O4 quantum dots/3D hexagonal CdS single crystals (0D/3D Co3O4 QDs/CdS) p-n heterojunction was constructed by simple hydrothermal and electrostatic self-assembly method. The amorphous monodisperse Co3O4...