Silicon carbide is a very interesting semiconductor for applications in high temperature, high frequency and high power. In this article, we have studied and compared MOS transistors with 130nm silicon carbide (3C-SiC, 4H-SiC and 6H-SiC) technologies using BSIM3v3 model. To perform this work we have used PSpice to study the characteristics I(V) and the transconductance gm as a function of temperature in the range -200° C to 750° C with a supply voltage VDS = 1.2V. We have also calculated the transition frequencies fT of the three types of transistors. Our results show that the (3C, 4H and 6H)-SiC transistors operate under a low voltage, low power, high temperature and high frequency in submicron dimension.

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