In nano-device applications using two-dimensional (2D) van der Waals materials, a heat dissipation through nano-scale interfaces can be a critical issue for optimizing device performances. By using a time-domain thermoreflectance measurement technique, we examine a cross-plane thermal transport through mono-layered ( n = 1) and bi-layered ( n = 2) WSe 2 flakes which are sandwiched by top metal layers of Al, Au, and Ti and the bottom Al 2 O 3 substrate. In these nanoscale structures with hetero- and homo-junctions, we observe that the thermal boundary resistance (TBR) is significantly enhanced as the number of WSe 2 layers increases. In particular, as the metal is changed from Al, to Au, and to Ti, we find an interesting trend of TBR depending on the WSe 2 thickness; when referenced to TBR for a system without WSe 2 , TBR for n = 1 decreases, but that for n = 2 increases. This result clearly demonstrates that the stronger bonding for Ti leads to a better thermal conduction between the metal and the WSe 2 layer, but in return gives rise to a large mismatch in the phonon density of states between the first and second WSe 2 layers so that the WSe 2 -WSe 2 interface becomes a major thermal resistance for n = 2. By using photoemission spectroscopy and optical second harmonic generation technique, we confirm that the metallization induces a change in the valence state of W-ions, and also recovers a non-centrosymmetry for the bi-layered WSe 2 .

We report on a comprehensive theoretical and experimental investigation of thermal conductivity in indium-tin-oxide (ITO) thin films with various Ga concentrations (0–30 at. %) deposited by spray pyrolysis technique. X-ray diffraction (XRD) and scanning electron microscopy have shown a structural transformation in the range 15–20 at. % Ga from the nanocrystalline to the amorphous phase. Room temperature femtosecond time domain thermoreflectance measurements showed nonlinear decrease of thermal conductivity in the range 2.0–0.5 Wm−1 K−1 depending on Ga doping level. It was found from a comparison between density functional theory calculations and XRD data that Ga atoms substitute In atoms in the ITO nanocrystals retaining Ia-3 space group symmetry. The calculated phonon dispersion relations revealed that Ga doping leads to the appearance of hybridized metal atom vibrations with avoided-crossing behavior. These hybridized vibrations possess shortened mean free paths and are the main reason behind the thermal conductivity drop in nanocrystalline phase. An evolution from propagative to diffusive phonon thermal transport in ITO:Ga with 15–20 at. % of Ga was established. The suppressed thermal conductivity of ITO:Ga thin films deposited by spray pyrolysis may be crucial for their thermoelectric applications.

A SrRuO3 thin film has been widely used as a metal electrode in electronic devices based on transition metal oxides, and hence it is important to understand its thermal transport properties to minimize a thermal degradation problem during the device operation. Using the time-domain thermoreflectance measurement technique, we investigate the cross-plane thermal conductivity of the SrRuO3 thin films with a thickness variation from 1 μm to 8 nm. We find that the thermal conductivity is reduced from about 6 W m−1 K−1 for the 1 μm thick film to about 1.2 W m−1 K−1 for the 8 nm thick film, and attribute this behavior to the boundary scattering of thermal carriers which originally have the mean free path of about 20 nm in a bulk state. Also, we observe a clear dip behavior of the thermal conductivity in the intermediate thickness around 30 nm which suggests an existence of a strong scattering source other than the film boundary. We explain this result by considering an additional interfacial scattering at the tetragonal-orthorhombic phase boundary which is formed during the strain relaxation with an increase of the film thickness.

We investigated the thermal transport properties of magnetic van der Waals materials, TMPS3 (TM = Mn, Ni, and Fe), using the time-domain thermoreflectance technique. We determined the cross-plane thermal conductivity, which turns out to be relatively low, i.e., about 1 W m−1 K−1 for all TMPS3 investigated. When compared with previous results of graphite and transition metal dichalcogenides (TMDs), thermal conductivity becomes smaller as it goes from graphite to TMDs to TMPS3, and the difference is larger at low temperature, e.g., around 50 K. From the Callaway model analysis, we could attribute the large thermal conductivity reduction for TMPS3, particularly at low temperature, to the phonon scattering from the boundary. We actually confirmed the existence of the large population of the stacking faults with the cross-sectional transmission electron microscopy image of MnPS3. This suggests that intrinsic or extrinsic stacking faults formed in van der Waals materials and their heterostructures can play an important role in reducing the cross-plane thermal conductivity as a source of the boundary scattering.

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