Atomically smooth hexagonal boron nitride (h-BN) layers have very useful properties and thus potential applications for protective coatings, deep ultraviolet (DUV) emitters, and as a dielectric for nanoelectronics devices. In this paper, we report on the growth of h-BN by a low-pressure chemical vapor deposition (LPCVD) process using diborane and ammonia as the gas precursors. The use of LPCVD allows synthesis of h-BN with a controlled number of layers defined by the growth conditions, temperature, time, and gas partial pressure. Furthermore, few-layer h-BN was also grown by a sequential growth method, and insights into the growth mechanism are described, thus forming the basis of future growth of h-BN by atomic layer epitaxy.

This paper describes the internal structure of Au-Pd nanoparticles exhibiting newly discovered three-layer core/shell morphology, which is composed of an evenly alloyed inner core, an Au-rich intermediate layer, and a Pd-rich outer shell. By exploitation of spatially resolved imaging and spectroscopic and diffraction modes of transmission electron microscopy (TEM), insights were gained on the composition of each one of the observed three layers, indicating a significant extent of intimate alloy among the monometallic elements.

As environmental regulations increase, more selective transition metal sulfide (TMS) catalytic materials for hydrotreating applications are needed. Highly active TMS catalysts become more and more desirable triggering new interest for unsupported Co-promoted MoS 2 -based systems that have high volumetric activity as reported here. Contrary to the common observation for alumina-supported MoS 2 -based catalysts, we found in our previous studies with dibenzothiophene (DBT) hydrodesulfurization (HDS) that the catalytic activity is directly proportional to the increase of surface area of the sulfide phases (Co 9 S 8 and MoS 2 ) present in Co-promoted MoS 2 unsupported catalysts. This suggests that activity is directly connected with an increase of the contact surface area between the two sulfide phases. Understanding of the nature of the possible interaction between MoS 2 and Co 9 S 8 in unsupported catalytic systems is therefore critical in order to get a more generalized overview of the causes for synergy. This has been achieved herein through the detailed characterization by XRD, XPS, and HRTEM of the highly active Co 9 S 8 / MoS 2 catalyst resulting in a proposed model for a Co 9 S 8 /MoS 2 interface. This model was then subjected to a DFT analysis to determine a reasonable description of the surface contact region between the two bulk phases. Modelling of the interface shows the creation of open latent vacancy sites on Mo atoms interacting with Co and formation of direct Co-Mo bonds. Strong electron donation from Co to Mo also occurs through the intermediate sulfur atom bonded to both metals while an enhanced metallic character is also found. These changes in coordination and electronic properties are expected to favor a synergetic effect between Co and Mo at the proposed localized interface region between the two bulk MoS 2 and Co 9 S 8 phases.

We investigate the scaling of Al2O3 dielectric on graphene by atomic layer deposition (ALD) using ultra-thin, oxidized Ti and Al films as nucleation layers. We show that the nucleation layer significantly impacts the dielectric constant (k) and morphology of the ALD Al2O3, yielding k = 5.5 and k = 12.7 for Al and Ti nucleation layers, respectively. Transmission electron microscopy shows that Al2O3 grown using the Ti interface is partially crystalline, while Al2O3 grown on Al is amorphous. Using a spatially uniform 0.6 nm-thick Ti nucleation layer, we demonstrate graphene field-effect transistors with top dielectric stacks as thin as 2.6 nm.

We describe a technique which allows a direct measurement of the relative Fermi energy in an electron system using a double layer structure, where graphene is one of the two layers. We illustrate this method by probing the Fermi energy as a function of density in a graphene monolayer, at zero and in high magnetic fields. This technique allows us to determine the Fermi velocity, Landau level spacing, and Landau level broadening in graphene. We find that the N = 0 Landau level broadening is larger by comparison to the broadening of upper and lower Landau levels.