Organic solar cells (OSCs) recently achieved efficiencies of over 18% and are well on their way to practical applications, but still considerable stability issues need to be overcome. One major problem emerges from the electron transport material zinc oxide (ZnO), which is mainly used in the inverted device architecture and decomposes many high-performance nonfullerene acceptors due to its photocatalytic activity. In this work, we add three different fullerene derivativesPC71BM, ICMA, and BisPCBMto an inverted binary PBDB-TF:IT-4F system in order to suppress the photocatalytic degradation of IT-4F on ZnO via the radical scavenging abilities of the fullerenes. We demonstrate that the addition of 5% fullerene not only increases the performance of the binary PBDB-TF:IT-4F system but also significantly improves the device lifetime under UV illumination in an inert atmosphere. While the binary devices lose 20% of their initial efficiency after only 3 h, this time is increased fivefold for the most promising ternary devices with ICMA. We attribute this improvement to a reduced photocatalytic decomposition of IT-4F in the ternary system, which results in a decreased recombination. We propose that the added fullerenes protect the IT-4F by acting as a sacrificial reagent, thereby suppressing the trap state formation. Furthermore, we show that the protective effect of the most promising fullerene ICMA is transferable to two other binary systems PBDB-TF:BTP-4F and PTB7-Th:IT-4F. Importantly, this effect can also increase the air stability of PBDB-TF:IT-4F. This work demonstrates that the addition of fullerene derivatives is a transferable and straightforward strategy to improve the stability of OSCs.

The synthesis of homogeneous covalent organic framework (COF) thin films on a desired substrate with decent crystallinity, porosity, and uniform thickness has great potential for optoelectronic applications. We have used a solution-processable sphere transmutation process to synthesize 300 ± 20 nm uniform COF thin films on a 2 × 2 cm 2 TiO 2 -coated fluorine-doped tin oxide (FTO) surface. This process controls the nucleation of COF crystallites and molecular morphology that helps the nanospheres to arrange periodically to form homogeneous COF thin films. We have synthesized four COF thin films (TpDPP, TpEtBt, TpTab, and TpTta) with different functional backbones. In a close agreement between the experiment and density functional theory, the TpEtBr COF film showed the lowest optical band gap (2.26 eV) and highest excited-state lifetime (8.52 ns) among all four COF films. Hence, the TpEtBr COF film can participate in efficient charge generation and separation. We constructed optoelectronic devices having a glass/FTO/TiO 2 /COF-film/Au architecture, which serves as a model system to study the optoelectronic charge transport properties of COF thin films under dark and illuminated conditions. Visible light with a calibrated intensity of 100 mW cm −2 was used for the excitation of COF thin films. All of the COF thin films exhibit significant photocurrent after illumination with visible light in comparison to the dark. Hence, all of the COF films behave as good photoactive substrates with minimal pinhole defects. The fabricated out-of-plane photodetector device based on the TpEtBr COF thin film exhibits high photocurrent density (2.65 ± 0.24 mA cm −2 at 0.5 V) and hole mobility (8.15 ± 0.64 ×10 −3 cm 2 V −1 S −1 ) compared to other assynthesized films, indicating the best photoactive characteristics.

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Passivation is one of the most promising concepts to heal defects created at the surface and grain boundaries of polycrystalline perovskite thin films, which significantly deteriorate the photovoltaic performance and stability of corresponding devices. Here, 1,10-phenanthroline, known as a bidentate chelating ligand, is implemented between the methylammonium lead iodide (MAPbI 3 ) film and the hole-transport layer for both passivating the lead-based surface defects (undercoordinated lead ions) and converting the excess/unreacted lead iodide (PbI 2 ) buried at interfaces, which is problematic for the longterm stability, into "neutralized" and beneficial species (PbI 2 (1,10-phen) x , x = 1, 2) for efficient hole transfer at the modified interface. The defect healing ability of 1,10phenanthroline is verified with a set of complementary techniques including photoluminescence (steady-state and time-resolved), space-charge-limited current (SCLC) measurements, light intensity dependent JV measurements, and Fourier-transform photocurrent spectroscopy (FTPS). In addition to these analytical methods, we employ advanced X-ray scattering techniques, nano-Fourier transform infrared (nano-FTIR) spectroscopy, and high-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM) to further analyze the structure and chemical composition at the perovskite surface after treatment at nanoscale spatial resolution. On the basis of our experimental results, we conclude that 1,10phenanthroline treatment induces the formation of different morphologies with distinct chemical compositions on the surface of the perovskite film such that surface defects are effectively passivated, and excess/unreacted PbI 2 is converted into beneficial complex species at the modified interface. As a result, an improved power conversion efficiency (20.16%) and significantly more stable unencapsulated perovskite solar cells are obtained with the 1,10-phenanthroline treatment compared to the MAPbI 3 reference device (18.03%).