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Heat conduction in submicron crystalline materials can be well modeled by the Boltzmann transport equation (BTE). The Monte Carlo method is effective in computing the solution of the BTE. These past years, transient Monte Carlo simulations have been developed, but they are generally memory demanding. This paper presents an alternative Monte Carlo method for analyzing heat conduction in such materials. The numerical scheme is derived from past Monte Carlo algorithms for steady-state radiative heat transfer and enables us to understand well the steady-state nature of phonon transport. Moreover, this algorithm is not memory demanding and uses very few iteration to achieve convergence. It could be computationally more advantageous than transient Monte Carlo approaches in certain cases. Similar to the famous Mazumder and Majumdar’s transient algorithm (2001, “Monte Carlo Study of Phonon Transport in Solid Thin Films Including Dispersion and Polarization,” ASME J. Heat Transfer, 123, pp. 749–759), the dual polarizations of phonon propagation, the nonlinear dispersion relationships, the transition between the two polarization branches, and the nongray treatment of phonon relaxation times are accounted for. Scatterings by different mechanisms are treated individually, and the creation and/or destruction of phonons due to scattering is implicitly taken into account. The proposed method successfully predicts exact solutions of phonon transport across a gallium arsenide film in the ballistic regime and that across a silicon film in the diffusion regime. Its capability to model the phonon scattering by boundaries and impurities on the phonon transport has been verified. The current simulations agree well with the previous predictions and the measurement of thermal conductivity along silicon thin films and along silicon nanowires of widths greater than 22nm. This study confirms that the dispersion curves and relaxation times of bulk silicon are not appropriate to model phonon propagation along silicon nanowires of 22nm width.