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Encouraging characterization data for 300 mm polished developmental wafers has been obtained, indicating individual parameter data in some cases comparable to or even exceeding state-of-the-art 200 mm epitaxial wafers. Initial oxygen precipitation data in 300 mm sectioned wafers indicates behavior consistent with previously observed phenomenon. Nevertheless, extensive work is required for further clarification and detailed comparison to 200 mm behavior.

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The flatness data indicates all suppliers are capable of supporting the 250 urn technology generation while several suppliers are already capable of supporting the 180 nm technology generation. It appears that individual parameter 300 mm polished wafer data are comparable with state-of-the-art and, indeed, may even be better than for 200 mm epitaxial wafers. Continued improvements in the control of the magnitude, tolerance and uniformity of silicon wafers is essential. A steep gradient in the learning curve is being pursued by all suppliers, especially for 300 mm wafers. However, it is also critical to balance the "best wafer possible" against the cost-o-ownership (CoO) opportunity of not driving silicon requirements to the detection limit or ultimate tool resolution but to some less stringent and optimized value.