A summary of photo- and electrochemical surface modifications applied on single-crystalline chemical vapour deposition (CVD) diamond films is given. The covalently bonded formation of amine- and phenyl-linker molecule layers is characterized using x-ray photoelectron spectroscopy, atomic force microscopy (AFM), cyclic voltammetry and field-effect transistor characterization experiments. Amine- and phenyl-layers are very different with respect to formation, growth, thickness and molecule arrangement. We detect a single-molecular layer of amine-linker molecules on diamond with a density of about 1014 cm−2 (10% of carbon bonds). Amine molecules are bonded only on initially H-terminated surface areas to carbon. In the case of electrochemical deposition of phenyl-layers, multi-layer formation is detected due to three-dimensional (3D) growths. This gives rise to the formation of typically 25 Å thick layers. The electrochemical grafting of boron-doped diamond works on H-terminated and oxidized surfaces.After reacting such films with hetero-bifunctional crosslinker molecules, thiol-modified ss-DNA markers are bonded to the organic system. Application of fluorescence and AFM on hybridized DNA films shows dense arrangements with densities of up to 1013 cm−2. The DNA is tilted by an angle of about 35° with respect to the diamond surface. Shortening the bonding time of thiol-modified ss-DNA to 10 min causes a decrease of DNA density to about 1012 cm−2. Application of AFM scratching experiments shows threshold removal forces of around 75 nN for DNA bonded on phenyl-linker molecules and of about 45 nN for DNA bonded to amine-linker molecules. DNA sensor applications using Fe(CN6)3−/4− mediator redox molecules, impedance spectroscopy and DNA-field effect transistor devices performances are introduced and discussed.

A summary of photo- and electrochemical surface modifications applied on single-crystalline chemical vapour deposition diamond films is given. The covalently bonded formation of amine and phenyl linker molecular layers is characterized using X-ray photoelectron spectroscopy, atomic force microscopy (AFM), cyclic voltammetry and field-effect transistor characterization experiments. Amine and phenyl layers are very different with respect to formation, growth, thickness and molecular arrangement. We deduce a sub-monolayer of amine linker molecules on diamond with approximately 10% coverage of 1.510(15) cm(-2) carbon bonds. Amine is bonded only on initially H-terminated surface areas. In the case of electrochemical deposition of phenyl layers, multilayer properties are detected with three-dimensional nitrophenyl growth properties. This leads to the formation of typically 25 A thick layers. The electrochemical bonding to boron-doped diamond works on H-terminated and oxidized surfaces. After reacting such films with heterobifunctional cross-linker molecules, thiol-modified ss-DNA markers are bonded to the organic system. Application of fluorescence and AFM on hybridized DNA films shows dense arrangements with densities up to 10(13) cm(-2). The DNA is tilted by an angle of approximately 35 degrees with respect to the diamond surface. Shortening the bonding time of thiol-modified ss-DNA to 10 min causes a decrease in DNA density to approximately 10(12) cm(-2). Application of AFM scratching experiments shows threshold removal forces of approximately 75 and 45 nN for the DNA bonded to the phenyl and the amine linker molecules, respectively. First, DNA sensor applications using Fe(CN6) 3-/4- mediator redox molecules and DNA field-effect transistor devices are introduced and discussed.

A high-efficiency guided-mode resonance reflection filter is reported. The device consists of a surface-relief photoresist grating and an underlying HfO (2) waveguide layer deposited on a fused-silica substrate. The spectral response measured with a dye-laser beam at normal incidence exhibited a peak reflectance of 98% at a wavelength of 860 nm with sideband reflectance below approximately 5% extending over the wavelength range provided by the dye (800-900 nm). At normal incidence the filter linewidth was 2.2 nm. High-efficiency double-peak resonances occurred at nonnormal incidence, with the spectral locations of the maxima vayring with the incidence angle. The filter response at various angles of incidence agreed well with the theoretically calculated reflectance curves.

The growth of covalently bonded nitrophenyl layers on atomically smooth boron-doped single-crystalline diamond surfaces is characterized using cyclic voltammetric attachment and constant-potential grafting by electrochemical reduction of aryl diazonium salts. We apply atomic force microscopy (AFM) in contact mode to remove phenyl layers and measure phenyl layer thicknesses by oscillatory AFM. Angle-resolved X-ray photoelectron spectroscopy is applied to reveal the bonding arrangement of phenyl molecules, and transient current measurements during the grafting are used to investigate the dynamics of chemical bonding. Nitrophenyl groups at an initial stage of attachment grow three-dimensional (3D), forming layers of varying heights and densities. Layer thicknesses of up to 80 A are detected for cyclic voltammetry attachment after five cycles, whereas the layer becomes denser and only about 25 A thick in the case of constant-potential attachment. No monomolecular closed layer can be detected. The data are discussed taking into account established growth models. Redox systems such as Fe(CN)63-/4- and Ru(NH3)62+/3+ are used to probe the electrochemical barrier properties of nitrophenyl groups grafted onto diamond.

The attractive behavior and advantages of a diamond electrode detector for a micromachined capillary electrophoresis (CE) system are discussed. A chemically vapor-deposited boron-doped diamond (BDD) film band (0.3 x 6.0 mm) electrode is used for end-column amperomettic detection. The favorable performance of the diamond electrode microchip detector is indicated from comparison to a commonly used thick-film carbon detector. The diamond electrode offers enhanced sensitivity, lower noise levels, and sharper peaks for several groups of important anaytes (nitroaromatic explosives, organophosphate nerve agents, phenols). The favorable signal-to-background characteristics of the BDD-based CE detector are coupled with a greatly improved resistance to surface fouling and greater isolation from high separation voltages. The enhanced stability is indicated from a RSD of 0.8% for 60 repetitive measurements of 5 ppm 2,4,6-trinitrotoluene (vs RSD of 10.8% at the thick-film carbon electrode). A highly linear response is obtained for the explosives 1,3-dinitrobenzene and 2,4-dinitrotoluene over the 200-1,400 ppb range, with detection limits of 70 and 110 ppb, respectively. Factors influencing the performance of the BDD detector are assessed and optimized. The attractive properties of BDD make it very promising material for electrochemical detection in CE microchip systems and other micromachined flow analyzers.