Thin films of Bi 2 O 3 -ZnO-Nb 2 O 5 system with cubic pyrochlore structure can be deposited using both cubic and monoclinic (zirconolite) targets. When monoclinic target was used, the as-deposited phase was nonequilibrium cubic monophase. After post-annealing in the 600-800 • C range, phase decomposition occurred, resulting in more thermodynamically stable cubic pyrochlore and monoclinic zirconolite phases. The dielectric properties, such as dielectric constant and electric field dependent tunability, showed a steep increase along with phase separation. However, dielectric loss had a reverse tendency. The maximum tunability was about 38%, which exceeds that of cubic pyrochlore monophase films deposited from cubic target.

ABSTRACT(Bi3xZn2−3x)(ZnxNb2−x)O7 thin films (x=1/2 and 2/3) have potential great for tunable RF and microwave devices due to medium dielectric constant and low dielectric loss. The tunable dielectric properties of Bi-rich, (Bi1.5 Zn0.5)(Zn0.5 Nb1.5)O7 thin films were investigated. To make Bi-rich cubic pyrochlore thin films, Bi2O3–ZnO–Nb2O5 monoclinic pyrochlore ceramic targets were used in reactive RF magnetron sputtering process. Substrate heating was employed to improve surface morphology and tunability. As-deposited films were crystallized or amorphous state depending on substrate temperature. All films were annealed at 600°C ∼ 800°C for 3 hours in the air. There were no zinc niobate secondary phases in the films before and after post-annealing, while quite significant amount BZN thin films were found in sputtered using cubic pyrochlore ceramic targets, especially after post-annealing. It was found that Bi-rich BZN films have much larger tunability when as-deposited phase are amorphous. The maximum tunability 38% was obtained when substrate is heated to 350°C and composition of films is close to exact stoichiometric cubic BZN.