A C‐band 50 W high‐power microwave monolithic integrated circuit amplifier for use in a phased‐array radar system was designed and fabricated using commercial 0.25 μm AlGaN/GaN technology. This two‐stage amplifier can achieve a saturated output power of 50 W with higher than 35% power‐added efficiency and 22 dB small‐signal gain over a frequency range of 5.5 GHz to 6.2 GHz. With a compact 14.82 mm2 chip area, an output power density of 3.2 W/mm2 is demonstrated.

An ultra-wideband microwave monolithic integrated circuit high-power amplifier with excellent input and output return losses for phased array jammer applications was designed and fabricated using commercial 0.25-m AlGaN/GaN technology. To improve the wideband performance, resistive matching and a shunt feedback circuit are employed. The input and output return losses were improved through a balanced design using Langecouplers. This three-stage amplifier can achieve an average saturated output power of 15 W, and power added efficiency of 10% to 28%, in a continuous wave operation over a frequency range of 6 GHz to 18 GHz. The input and output return losses were demonstrated to be lower than -15 dB over a wide frequency range. Keywords: Gallium nitride (GaN), microwave monolithic integrated circuit (MMIC), high power amplifier (HPA), wideband, return loss, electronic warfare (EW).Manuscript received Dec. 11, 2015; revised Mar. 15, 2016; accepted Apr. 5, 2016. This work was supported by the Agent for Defense Development, Korea (15AR2200, The wide-band semiconductor phased array transmitter technology).Jin-Cheol Jeong (corresponding author, jcjung@etri.re.kr), Dong-Pil Jang (dpjang@etri. re.kr), Dong-Hwan Shin (dh-shin@etri.re.kr), and In-Bok Yom (ibyom@etri.re.kr) are with the Broadcasting

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In this paper, we present a 40 W microwave monolithic integrated circuit high power amplifier using commercial 0.25 mm AlGaN/GaN technology for use in a C-band phased array radar system. This two-stage amplifier, with a chip size of 3.8 mm x 3.9 mm can achieve a saturated output power of 40 W with higher than 35% power added efficiency and 22 dB small signal gain over a frequency range of 5.4 GHz to 6.1 GHz. An output power density of 2.6 W/mm 2 is demonstrated with a compact 14.82 mm 2 chip area.

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