The fabrication of fully transparent inversed staggered Aluminum-doped zinc oxide (AZO) thin-film transistors (TFTs) at room temperature was proposed. High performance and stability AZO TFTs were obtained, mobility of 59.3 cm 2 /V• s, on/off ratio of 2.7×10 8 , and subthreshold swing of 122.9 mV/dec. We studied the device stability and performance of the AZO TFT with a time span of six months. The properties degenerated very weekly, which showed that the AZO TFT we fabricated owned high stability. Furthermore, hysteresis loop scanning of AZO TFT was performed, and we found little hysteresis in scanning curves.

No abstract