The aging fracture of bonding wire is one of the main reasons for failure of insulated gate bipolar transistor (IGBT). This paper proposes an online monitoring method for IGBT bonding wire aging that does not interfere with the normal operation of the IGBT module. A quantitative analysis of aging degree was first performed, and the results of multivariate and univariate monitoring were compared. Based on the relationship between the monitoring parameters and the aging of the IGBT bonding wire, gradual damage of the IGBT bond wire was implemented to simulate aging failure and obtain the aging data. Moreover, the change of junction temperature was considered to regulate monitoring parameters. Then, the aging degree was evaluated by an artificial neural network (ANN) algorithm. The experimental results showed the effectiveness of the proposed method.
This study presents an open-circuit fault diagnosis method based on residual changing rate instead of the specific switching signals injection for single insulated gate bipolar transistor in the single-phase pulse-width modulation (PWM) converter. Firstly, the mixed logical dynamic model of the single-phase PWM converter is established to obtain the residual of grid-side current. Then, the characteristics of residual changing rate are obtained through the combination of theoretical analysis and simulation results. Furthermore, the diagnostic variables based on the residual changing rate are defined by the isolation of switching signals. Also compared with the threshold, fault detection and location can be accomplished. The proposed diagnosis method does not need extra sensors and injection of special switching signals, which can reduce the diagnosis complexity and does not affect operating state of the system. Furthermore, the diagnostic method has fast diagnosis speed and robustness against false alarms under different operation conditions. Experimental results have illustrated the validity and feasibility of the proposed diagnostic method.
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