Growth of large-scale patterned, wrinkle-free graphene and the gentle transfer technique without further damage are most important requirements for the practical use of graphene. Here we report the growth of wrinkle-free, strictly uniform monolayer graphene films by chemical vapor deposition on a platinum (Pt) substrate with texture-controlled giant grains and the thermal-assisted transfer of large-scale patterned graphene onto arbitrary substrates. The designed Pt surfaces with limited numbers of grain boundaries and improved surface perfectness as well as small thermal expansion coefficient difference to graphene provide a venue for uniform growth of monolayer graphene with wrinkle-free characteristic. The thermal-assisted transfer technique allows the complete transfer of large-scale patterned graphene films onto arbitrary substrates without any ripples, tears, or folds. The transferred graphene shows high crystalline quality with an average carrier mobility of ∼ 5500 cm(2) V(-1) s(-1) at room temperature. Furthermore, this transfer technique shows a high tolerance to variations in types and morphologies of underlying substrates.

Platinum thin films were deposited by reactive magnetron sputtering on SiO2/Si substrates. Argon-oxygen sputtering gas mixtures were used to control the microstructure and the preferred orientation of platinum films. As the oxygen fraction in the sputtering gas increased, the preferred orientation of as-deposited film was changed from (111) to random orientation. Post-sputtering anneal was done at 750–1,000°C range in air ambient to study the effects of the incorporated oxygen on the grain growth behaviors of platinum films. After sputtering and anneal at optimum conditions, the 1-µm thick Pt films completely transformed to giant grains with sizes as large as several millimeters. Furthermore, the preferred orientation of the giant grains could be controlled to either (111) or (200).