Humidity‐based power generation that converts internal energy of water molecules into electricity is an emerging approach for harvesting clean energy from nature. Here it is proposed that intrinsic gradient within a humidity field near sweating surfaces, such as rivers, soil, or animal skin, is a promising power resource when integrated with liquid‐infused nanofluidics. Specifically, capillary‐stabilized ionic liquid (IL, Omim+Cl‐) film is exposed to the above humidity field to create a sustained transmembrane water‐content difference, which enables asymmetric ion‐diffusion across the nanoconfined fluidics, facilitating long‐term electricity generation with the power density of ≈12.11 µW cm‐2. This high record is attributed to the nanoconfined IL that integrates van der Waals and electrostatic interactions to block movement of Omim+ clusters while allowing for directional diffusion of moisture‐liberated Cl+. This humidity gradient triggers large ion‐diffusion flux for power generation indicates great potential of sweating surfaces considering that most of the earth is covered by water or soil.

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Influence of strain-induced indium clustering on characteristics of InGaN/GaN multiple quantum wells with high indium compositionGreen-light-emission InGaN / GaN multiple quantum wells ͑MQWs͒ with different polarities were grown by metal organic chemical vapor deposition. A clear phase separation was observed both in the Ga-and N-polarity samples by high resolution transmission electron microscopy, corresponding to two InGaN-related emissions ͑In-rich dots and an InGaN matrix͒ seen in photoluminescence spectra. The dot-related emission in the Ga-polarity MQWs shows stronger carrier localization, as well as a weak influence of defects and temperature insensitivity, when compared to the N-polarity MQWs. In addition, efficient carrier transport, from the low-indium InGaN matrix to high-indium In-rich dots, was observed in the Ga-polarity structure, enhancing the function of quantum-dot structures with Ga polarity, and resulting in a high quantum yield of green light emission.

Temperature and time evolution of the photoluminescence ͑PL͒ intensity of bimodal ZnTe/ ZnSe type-II quantum dots ͑QDs͒ were investigated. A particular temperature dependence of PL was observed in large QDs. PL decay of small QDs is composed of a faster initial component and a slower tail component whereas PL decay of large QDs simply comprises a fast component. All phenomena could be understood consistently by considering charge carrier transfer mechanism, band-bending effect, and the existence of nonradiative centers in the bimodal type-II QD array. We show that excitons play an important role in the emission properties of a self-assembled type-II QD system.

ZnO films were grown on (0001) sapphire substrates by atomic layer deposition (ALD) using diethylzinc (DEZn) and nitrous oxide (N 2 O) in an inductively heated reactor operated at atmospheric pressure. Low-temperature (LT) ZnO buffer layers having various thicknesses were deposited at 400 followed by subsequent growth of ZnO films at 600 . Some of the ZnO films were then post-annealed at 1000 in the N 2 O flow. Under certain growth conditions, ZnO nanowires were formed on the post-annealed ZnO samples. Room temperature (RT) photoluminescence (PL) spectra of the ZnO nanowires show strong ultraviolet (UV) near band edge emissions at 3.27 eV with a typical full width at half-maximum ( FWHM ) of ~130 meV and quenched defect luminescence. 10 K PL spectra of the post-annealed ZnO all exhibit sharp excitonic emissions with the dominant emission being located at 3.36 eV having a FWHM of 4.6 meV.