The GMR editorial staff was alerted and after a thorough investigation, there is strong reason to believe that the peer review process was failure. Also, after review and contacting the authors, the editors of Genetics and Molecular Research decided to retract this article in accordance with the recommendations of the Committee on Publication Ethics (COPE). The authors and their institutions were advised of this serious breach of ethics.
A novel Ag/Bi3TaO7 plasmonic photocatalyst has been prepared by a simple photoreduction process. The as-prepared Ag/Bi3TaO7 photocatalyst exhibited an enhanced photocatalytic activity for the degradation of tetracycline (TC) compared to that of a bare Bi3TaO7 catalyst. The 1 wt % Ag-loaded Bi3TaO7 sample showed the highest photocatalytic efficiency for TC degradation (85.42%) compared with those of the other samples. The enhanced photocatalytic activity could be ascribed to the synergistic effect of the surface plasmon resonance caused by Ag nanoparticles. Electrochemical impedance spectroscopy demonstrated that the incorporation of silver nanoparticles onto the Bi3TaO7 surface promoted the separation of photogenerated carriers. In addition, an electron spin resonance (ESR) and trapping experiment revealed that the photoinduced active species hydroxyl radical and superoxide radical were the main active species in the photocatalytic process of TC degradation. The photocatalytic reaction mechanism was discussed by active species trapping and ESR analysis.
Abstract:The reflection and diffraction of extreme ultraviolet (EUV) light from lithographic masks and the projection imaging of these masks by all-reflective systems introduce several significant imaging artifacts. The off-axis illumination of the mask causes asymmetric shadowing, a size bias between features with different orientations and telecentricity errors. The image contrast varies with the feature orientation and can easily drop far below intuitively expected values. The deformation of the wavefront or phase of the incident light by thick absorbers generates aberration-like effects, especially variations of the best-focus (BF) position vs. the pitch and size of the imaged patterns. Partial reflection of light from the top of the absorber generates a weak secondary image, which superposes with the main image. Based on a discussion of the root causes of these phenomena, we employ mask diffraction and imaging analysis for a quantitative analysis of these effects for standard EUV masks. Simulations for various non-standard types of mask stacks (e.g. etched multilayers, buried shifters, etc.) and for various non-standard absorber materials are used to explore the imaging capabilities of alternative masks for EUV lithography. Finally, an outlook at anamorphic systems for larger numerical apertures is given.
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