The Huang-Rhys factor S for electron capture by neutral centers associated with multiphonon emission is calculated assuming the square-well model potential. The S-factor dependence on the energy level in the trapping center has been obtained for the capture by the ground and by the lowest excited state for two types of electron-phonon interaction: the optical deformation potential and the polar potential. The results are compared with the S factor obtained by the quantum-defect method.

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