Al-doped ZnO (AZO) films were deposited onto glass substrates by RF magnetron sputtering for solar cell applications. The effects of the Al 2 O 3 doping concentration on the structural, electrical, and optical properties of the AZO films were investigated. As the Al 2 O 3 doping concentration was increased to 4.0 wt %, X-ray diffraction (XRD) showed a deterioration in the (002) peak intensity and a shift towards a higher angle. The best electrical properties ( ¼ 9:8 Â 10 À4 cm, H ¼ 22 cm 2 V À1 s À1 , and n e ¼ 2:89 Â 10 20 cm À3 ) were obtained in the AZO sample containing 2 wt % Al 2 O 3 . Optical transmission >83% in the visible range was also observed and the optical bandgap was increased to 3.63 eV at an Al 2 O 3 concentration of 4 wt %. For photoluminescence (PL) spectra, one UV emission peak at approximately 3.2 eV and a broad peak in the visible range from 2.3 to 2.7 eV were observed at Al 2 O 3 doping concentrations ranging from 0 -2.0 wt %. Blue emission at 2.67 eV, which indicates a non-stoichiometric structure, was only observed in the 4 wt % doped AZO films.
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