Quantitative real-time PCR (qRT-PCR) is widely used to analyze the expression profiles of the genes of interest. In order to obtain accurate quantification data, normalization by using reliable internal control genes is essential. In this study, we evaluated the stability and applicability of eight internal control gene candidates for analyzing gene expression during fruit development in dwarf tomato cultivar Micro-Tom. We collected seventeen different samples from flowers and fruits at different developmental stages, and estimated the expression stability of the candidate genes by two statistical algorithms, geNorm and NormFinder. The combined ranking order and qRT-PCR analyses for expression profiles of SlYABBY2a, SlYABBY1a, FRUITFULL1 and APETALA2c suggested that EXPRESSED was the most stable and reliable internal control gene among the candidates. Our analysis also suggested that RPL8 was also suitable if the sample group is limited to fruits at different maturation stages. In addition to EXPRESSED, GAPDH was also applicable for relative quantitation to monitor gene expression profiles through fruit development from pistil to pericarp.

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Active-matrix thin film transistors (TFTs) on glass substrates with a metal backplane, that are applied for flat panel displays, can be considered as a metamaterial absorber. In this study, TFT structures using doped silicon at source, drain, and channel terminals are investigated. These terminals are unchanged in size of 75 µm square and thickness of 5.3 µm. The electric conductivity is varied at the channel. The simulation results show that the structures with 500 S\m electric conductivity channels absorb incident electromagnetic waves with appropriately 100% at 758 GHz and a wide bandwidth of 20 GHz. As the electrical conductivity increases, the absorption and bandwidth are smaller at the main resonance peak. As the electrical conductivity decreases, the absorption falls at the resonance frequency, but the bandwidth is broadened. In addition, the electric field in the channel may influence the electron in the semiconductor and the electrical current between the source and drain terminals. By observing the electric field at the resonance frequency, we found that it is focused on the sides of channel terminals.