, respectively and annealed at 1350 °C for 2 min. The activation efficiency and mobility increase with anneal temperature, indicating an improved implantation damage recovery. The highest mobility obtained from the Si-implanted Al 0.25 Ga 0.75 N was 50 cm 2 /Vs for a dose of 1 × 10 15 cm −2 . The increase of photoluminescence intensities of band-edge luminescence and a broad green band was observed as the anneal temperature increases from 1200 to 1350 °C, indicating an excellent implantation damage recovery with increasing anneal temperature.

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