Built the quantum-mechanical scheme for investigating the spectrum of thermally stimulated currents of depolarization (TCDP), which allows to study the processes of relaxation of hetero-and homo-charge in hydrogen bonded crystals (HBC) with complex crystalline structure (layered silicates, crystal-hydrates), taking into account the distribution of relaxers (protons) over the energy levels of the quasi-discrete spectrum in potential image of the crystal lattice, and allows us to calculate the parameters of low-temperature relaxers by the Klinger method in the quadratic approximation over the external electric field. However, the calculation of the excess proton concentration operator was carried out in the quasi-classical approximation on the basis of the Fokker-Planck operator equation, which is solved together with the Poisson operator equation. By method of density matrix in the quadratic approximation in the external field calculated thermally stimulated depolarization currents on the basis of which the investigated size effects in the nanometer size layers associated with the shift of the maximum current of thermo-depolarization to low temperatures while reducing the thickness of the crystal layer.

A universal device for experimentally studying the migration of microscopic structure defects and the features of dielectric relaxation is proposed. it allows using the thermo stimulated depolarization method, in combination with the measurement of the tangent of the angle of dielectric losses and the thermo stimulated polarization current, to perform dielectric spectroscopy of hydrogen-bonded crystals and perform analysis of the properties and parameters of structure defects. A smaller (in comparison with the existing installation) additional compact device for measuring small values of electrical capacitance and the tangent of the angle of dielectric losses, including an electrometer B7-30, was designed, measurement was carried out using a q-factor meter VM 560. When measuringtgδ > 0.1, the VM-507 device was used. An experimental methodology is proposed that allows, in combination with the method of minimizing the comparison function (MFC - method), with a high degree of accuracy, to calculate the molecular characteristics of structural defects in composite materials based on semiconductors and dielectrics used in the electrical and optical fiber industry, electric power and insulation technology.

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