Articles you may be interested inSuppression of metastable-phase inclusion in N-polar ( 000 1 ¯ ) InGaN/GaN multiple quantum wells grown by metalorganic vapor phase epitaxy Appl. Phys. Lett. 106, 222102 (2015); 10.1063/1.4922131 Morphological, structural, and emission characterization of trench defects in InGaN/GaN quantum well structures Appl. Phys. Lett. 101, 212107 (2012); 10.1063/1.4768291 Investigation of V-Defects and embedded inclusions in InGaN/GaN multiple quantum wells grown by metalorganic chemical vapor deposition on (0001) sapphire Appl. Phys. Lett. 83, 33 (2003); 10.1063/1.1588370 Dislocation behavior in InGaN/GaN multi-quantum-well structure grown by metalorganic chemical vapor deposition Appl.Effects of growth interruption on the optical and the structural properties of InGaN/GaN quantum wells grown by metalorganic chemical vapor depositionThe morphological evolution of InGaN/GaN multiple-quantum wells ͑MQWs͒ grown by metalorganic chemical vapor deposition has been examined by atomic force microscopy and cross-sectional transmission electron microscopy. We have determined that GaN barrier growth at low temperature ͑ϳ800°C͒ in a H 2 -free environment results in a microstructure that consists of not only V-defects, but also inclusions embedded within V-defects that originate at the first InGaN-to-GaN growth interface. Propagation of the inclusions results in progressive deterioration of the surface morphology and reduced MQW thermal stability as quantum-well periods are added. Raising the GaN barrier growth temperature to 900°C or adding H 2 suppresses inclusion propagation entirely and preserves two-dimensional step-flow growth mode, resulting in superior morphology and higher thermal stability.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.